Nanoparticle Nano-Layers for Imaging High-Aspect Ratio Trenches
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Solution Overview
Problem
Current imaging techniques struggle to efficiently image high-aspect ratio trenches in semiconductor structures, particularly those made of materials with low atomic numbers, due to the difficulty in penetrating these materials with electron beams.
Innovation Solution
A method involving the deposition of functionalized nanoparticles within semiconductor structures, where the nanoparticles are modified with organic molecules having a head group that binds to the nanoparticle and a tail group that binds to the semiconductor structure, thereby creating a nano-layer that enhances imaging and contrast.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If electron beam imaging is used on high-aspect ratio trenches made of low atomic number materials, then imaging capability is maintained, but imaging efficiency and contrast deteriorate significantly
Solution Approach 1:
The patent introduces a nano-layer composed of high atomic number materials (such as gold, platinum, or tungsten nanoparticles) as an intermediary between the electron beam and the low atomic number trench structures. This nano-layer acts as a mediator that enhances electron scattering and backscattering signals, thereby improving imaging contrast without requiring changes to the original semiconductor structure. The organic molecules with head groups bind to nanoparticle surfaces and tail groups bind to trench surfaces, facilitating uniform deposition of these contrast-enhancing nanoparticles.
2Device complexity
If conventional imaging techniques are used on high-aspect ratio structures, then equipment complexity is minimized, but imaging capability and speed deteriorate
Solution Approach 1:
The patent changes the physical parameter of the trench structure by depositing a nano-layer with different atomic number characteristics onto the high-aspect ratio trenches. This parameter change (adding high atomic number materials to low atomic number structures) fundamentally alters the interaction between the electron beam and the sample, enabling conventional imaging equipment to detect and measure trench features that were previously invisible or difficult to resolve.
3Ease of manufacture
If no contrast enhancement is applied, then process simplicity is maintained, but imaging quality and scanning speed deteriorate
Solution Approach 1:
The patent applies preliminary action by depositing the contrast-enhancing nano-layer onto the semiconductor structures before the imaging process. This pre-treatment step involves modifying synthesized nanoparticles with organic molecules that have specific binding affinity for the trench surfaces, ensuring uniform coverage and optimal contrast enhancement. By performing this action beforehand, the actual imaging process becomes simpler and faster, as no complex imaging techniques or post-processing are required.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method enables efficient imaging of high-aspect ratio trenches by forming a nano-layer that improves contrast and facilitates faster scanning, allowing for the detection of improper etching or deposition in semiconductor structures.
Implementation Method 1
The organic molecule comprises a head group that binds to the surface of the synthesized nanoparticle and a tail group. The method additionally comprises depositing the synthesized nanoparticles onto at least part of a semiconductor structure, wherein the tail group binds the synthesized nanoparticles to at least part of the semiconductor structure.
Implementation Method 2
Most current techniques for imaging trenches employ backscattering and electron beam usage.
Data Source
AI summary
The enclosed disclosure relates to a method and apparatus for depositing functionalized nanoparticles within a semiconductor structure in order to create a nano-layer capable of enhancing imaging and contrast, The semiconductor structure can include any type of VNAND structure or 3D structure, The nanoparticles are formed in high-aspect ratio trenches of the structure and form a nano-layer. The functionalized nanoparticles comprise synthesized nanoparticles as well as organic molecules. The organic molecules are chosen to selectively bind to certain nanoparticles and surface materials.