Nanoparticle Mask Funnel Placement for Carbon Nanotubes
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Solution Overview
Problem
The use of carbon nanotubes in semiconductor manufacturing is limited due to their vertical growth characteristics, making it difficult to accurately place them in horizontal trenches within semiconducting substrates.
Innovation Solution
A system comprising a nanoparticle mask with funnels and a plasma chamber is used to control the placement of carbon nanotubes, where a dusty plasma is generated and the mask with openings allows the nanotubes to pass through and land on a target substrate, utilizing magnetic and electric fields to orient and position them accurately.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If carbon nanotubes are grown using conventional methods, then they exhibit strong semiconducting properties and high current handling capability, but they grow vertically normal to the substrate surface making them difficult to place in horizontal trenches
Solution Approach 1:
A positioning mask with funnel structures is introduced as an intermediary component between the carbon nanotube growth chamber and the substrate. The mask contains multiple funnels with inlet openings at the top and outlet openings at the bottom, which guide and position the nanotubes as they grow vertically, directing them to specific locations on the substrate including horizontal trenches that would be inaccessible through direct vertical growth alone.
Solution Approach 2:
The invention adds a spatial dimension to nanotube placement by using the vertical height of the funnel structures. Nanotubes grow vertically through the funnel's length, and by controlling funnel orientation and substrate positioning, nanotubes can be directed to locations in multiple directions including horizontal trenches, effectively adding positional control in dimensions beyond simple vertical growth.
2Ease of manufacture
If carbon nanotubes grow vertically normal to the substrate, then they maintain their inherent growth characteristics, but they cannot be accurately placed in desired locations within horizontal trenches
Solution Approach 1:
The positioning mask serves as a mediator that preserves the simple vertical growth process while enabling versatile placement. The funnels maintain the straightforward top-down growth approach but provide the adaptability to direct nanotubes to various substrate locations including horizontal trenches, thereby increasing application flexibility without complicating the growth mechanism itself.
Solution Approach 2:
The positioning mask with its array of funnels provides a universal solution that can accommodate multiple substrate configurations and trench orientations. The same mask structure enables placement in vertical, horizontal, and angled locations, making the system adaptable to various semiconductor device architectures and application requirements.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method enables precise placement of carbon nanotubes on desired locations within semiconductor substrates, overcoming the challenge of vertical growth and enhancing their application in semiconductor manufacturing.
Implementation Method 1
creating a dusty plasma comprising a plurality of carbon nanotubes
Implementation Method 2
utilizing magnetic and electric fields to orient and position them accurately
Implementation Method 3
utilizing magnetic and electric fields to orient and position them accurately
Implementation Method 4
extinguishing the dusty plasma to thereby allow at least some of the carbon nanotubes in the dusty plasma to pass through
Data Source
AI summary
The present invention is generally directed to a system for controlling placement of nanoparticles, and methods of using same. In one illustrative embodiment, the device includes a substrate and a plurality of funnels in the substrate, wherein each of the funnels comprises an inlet opening and an elongated, rectangular shaped outlet opening. In one illustrative embodiment, the method includes creating a dusty plasma comprising a plurality of carbon nanotubes, positioning a mask between the dusty plasma and a desired target for the carbon nanotubes, the mask having a plurality of openings extending therethrough, and extinguishing the dusty plasma to thereby allow at least some of the carbon nanotubes in the dusty plasma to pass through at least some of the plurality of openings in the mask and land on the target.