Nanoparticle-Polymer Resists for EUV Lithography
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Solution Overview
Problem
Current photoresists used in semiconductor processing lack the necessary sensitivity and resolution for advanced photolithography applications, particularly at extreme ultraviolet wavelengths.
Innovation Solution
A composite material is developed, comprising nanoparticles with a core and a coating of specific ligands, combined with a polymerization product of a photoacid generator, unsaturated monomers, and a chain transfer agent, which enhances the sensitivity and resolution of photolithography materials.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional photoresists are used, then the manufacturing process is simple, but the sensitivity and resolution are insufficient for advanced photolithography
Solution Approach 1:
The patent applies composite materials by combining metal oxide nanoparticles with organic polymer matrices to create hybrid photoresist systems. This composite structure integrates the high sensitivity and resolution capabilities of inorganic nanoparticles with the processability and tunability of organic polymers, thereby achieving improved manufacturing precision while managing structural complexity through systematic material design
2Manufacturing precision
If metal oxide nanoparticles with organic ligands are used, then EUV wavelength patterning is enabled, but the sensitivity and resolution remain insufficient
Solution Approach 1:
The patent applies parameter changes by systematically varying the nanoparticle size, ligand composition, polymer matrix structure, and crosslinking density to optimize photoresist performance. By adjusting these parameters, the material achieves higher sensitivity (reduced dose requirements) and resolution simultaneously, as the modified parameters enhance both the optical response and the pattern formation capability
3Ease of manufacture
If nanoparticle aggregates are formed with ligands, then the material can be processed from solvents, but the sensitivity and resolution are limited
Solution Approach 1:
The patent applies local quality by creating spatially differentiated structures within the photoresist, including core-shell nanoparticles with distinct functional zones, gradient polymer compositions, and localized crosslinking regions. This allows different areas of the material to perform specialized functions, maintaining ease of manufacture through solvent processing while achieving high resolution through localized structural optimization
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The composite material provides high sensitivity and resolution, enabling improved pattern quality and reduced dose requirements in photolithography, suitable for small pattern sizes and thin films.
Implementation Method 1
a polymerization product of a photoacid generator comprising a polymerizable group
Data Source
AI summary
A composite, which is a blend comprising: a nanoparticle comprising a core and a coating surrounding the core; and a polymer, wherein the coating of the nanoparticle comprises a ligand, wherein the ligand is a substituted or unsubstituted C1-C16 carboxylic acid or a salt thereof, a substituted or unsubstituted C1-C16 amino acid or a salt thereof, a substituted or unsubstituted C1-C16 dialkyl phosphonate, or a combination thereof; and wherein the polymer is a polymerization product of a photoacid generator comprising a polymerizable group; at least one unsaturated monomer, which is different from the photoacid generator comprising a polymerizable group; and a chain transfer agent of formula (I);wherein: Z is a y valent C1-20 organic group, x is 0 or 1, and Rd is a substituted or unsubstituted C1-20 alkyl, C3-20 cycloalkyl, C6-20 aryl, or C7-20 aralkyl.