Nanoparticle Resistive Memory via Polymer Matrix Control

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Solution Overview

Problem

Existing resistive memory devices face limitations in controlling the active interface and switching volume, which affects the reliability and performance of memory cells, particularly due to constraints on the size and distribution of nanoparticles and the material used in the interface engineering.

Innovation Solution

The method involves embedding ligand-grafted nanoparticles, such as metal oxide or chalcogenide nanoparticles, within a polymer matrix, allowing for controlled assembly and placement between electrodes, enabling flexible interface engineering and multilevel memory cell design through the use of polymer-coated nanoparticles that can be uniformly deposited and filled in deep cavities, and the selection of materials for tuning resistivity.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Productivity

If nanoparticles are used in resistive memory devices, then memory density and speed are improved, but control over active interface and switching volume becomes difficult

Engineering Contradiction:
Improvememory density and speedVSAvoidcontrol over active interface and switching volume
Core Design Contradiction:
ProductivityVSManufacturing precision

Solution Approach 1:

A polymer matrix is introduced as an intermediary material to embed and position nanoparticles. The polymer acts as a mediator that enables precise control over nanoparticle placement, active interface area, and switching volume while maintaining the performance benefits of nanoparticles. This resolves the contradiction by providing the missing control mechanism without sacrificing productivity.

Inventive Principle:
Principle #24Intermediary (Mediator)

Solution Approach 2:

The invention creates a composite material system combining nanoparticles embedded in a polymer matrix. This composite structure allows simultaneous achievement of high memory density (from nanoparticles) and precise control over interface and volume (from the polymer matrix), directly resolving the technical contradiction.

Inventive Principle:
Principle #40Composite materials

2Ease of manufacture

If conventional materials are used for interface engineering, then manufacturing is simpler, but reliability and performance are limited

Engineering Contradiction:
Improvesimplicity of manufacturingVSAvoidreliability and performance of memory cells
Core Design Contradiction:
Ease of manufactureVSReliability

Solution Approach 1:

The polymer-nanoparticle composite material provides both ease of manufacture (through solution processing and simple deposition) and enhanced reliability (through controlled interface engineering and stable resistance levels). The composite nature allows combining the processing advantages of polymers with the functional advantages of nanoparticles.

Inventive Principle:
Principle #40Composite materials

Solution Approach 2:

The polymer matrix enables tuning of key parameters including active interface area, switching volume, and resistance levels. By changing polymer properties and nanoparticle concentration, reliability and performance can be optimized while maintaining manufacturing simplicity through solution-based processes.

Inventive Principle:
Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach allows for precise control over the switching volume and stability of resistance levels, enhancing the reliability and performance of resistive memory devices by tuning the active interface and resistivity, and enabling the creation of multilevel and neuromorphic memory cells.

Implementation Method 1

providing polymer-grafted memory material nanoparticles which form a polymer matrix made of polymeric ligand that embeds the memory material nanoparticles

Methodology Applied
Scientific EffectPhysical embedding:

Implementation Method 2

The nanoparticles self-assemble in the recesses so that they are positioned in a controlled manner

Methodology Applied
Scientific EffectSelf-assembly: Self-Assembly

Implementation Method 3

resistive random access memory (ReRAM) devices refer to non-volatile memory (NVM) devices that employ multiple resistive states of a material

Methodology Applied
Scientific EffectResistance switching:

Data Source

PatentEP3571728B1Nanoparticle-based resistive memory device and methods for manufacturing the same
Publication Date: 2020.10.14 SANDISK TECHNOLOGIES LLC
  • EP3571728B1 patent drawingFigure 1A~1B
  • EP3571728B1 patent drawingFigure 1C~1D
  • EP3571728B1 patent drawingFigure 2A~2C

AI summary

Resistive memory cells containing nanoparticles are formed between two electrodes. The nanoparticles may be embedded in a matrix or sintered together without a matrix. The memory cells may be projected memory cells or barrier modulated cells. Polymeric ligands may be used to deposit the nanoparticles over a substrate, followed by an optional removal or replacement of the polymeric ligands.