Nanorod LED with Benzocyclobutene Planar Layer

Resolve Bottlenecks,
Find Innovative Solutions
Generate Solutions

Solution Overview

Problem

Current light emitting diodes (LEDs) face challenges in achieving high light-emitting efficiency, which is crucial for their application in various fields, as they often have limitations in quantum well structure dimensions and material usage.

Innovation Solution

The development of a light emitting diode with a nanorod layer and a transparent planar layer made of benzocyclobutene, where the quantum well structure dimensions are optimized (0.5H ≤ W < 10H) and the nanorods are spaced closely (2 nm to 3 nm apart), enhancing internal quantum efficiency and light extraction.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Loss of energy

If conventional LED structures are used, then manufacturing is simpler, but light-emitting efficiency is lower

Engineering Contradiction:
Improvelight-emitting efficiencyVSAvoidnanorod layer structure
Core Design Contradiction:
Loss of energyVSDevice complexity

Solution Approach 1:

The active region is segmented into multiple nanorods with quantum well structures, replacing conventional planar layers. This segmentation increases the surface area for light emission and improves internal quantum efficiency by confining carriers more effectively in the quantum well regions of each nanorod.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The invention transitions from a two-dimensional planar active region to a three-dimensional nanorod array structure. This dimensional change allows light to be emitted from multiple orientations and improves light extraction efficiency by reducing total internal reflection at the semiconductor-air interface.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

2Loss of energy

If quantum well structure dimensions are not optimized, then manufacturing is easier, but internal quantum efficiency is lower

Engineering Contradiction:
Improveinternal quantum efficiencyVSAvoidquantum well dimension control
Core Design Contradiction:
Loss of energyVSManufacturing precision

Solution Approach 1:

The invention optimizes specific parameters of the quantum well structure within nanorods, including width-to-height ratio (0.5 ≤ W/H < 10), width (5-50 nm), and height (5-50 nm). These parameter changes maximize carrier confinement and radiative recombination efficiency, achieving internal quantum efficiency up to 90%.

Inventive Principle:
Principle #35Parameter changes

3Loss of energy

If nanorods are spaced farther apart, then manufacturing is easier, but light-extraction efficiency is lower

Engineering Contradiction:
Improvelight-extraction efficiencyVSAvoidnanorod spacing control
Core Design Contradiction:
Loss of energyVSManufacturing precision

Solution Approach 1:

The invention applies local quality by creating regions of high nanorod density with specific spacing (2-3 nm) in the active region. This local optimization ensures sufficient proximity for enhanced light extraction through near-field coupling while maintaining manufacturability through controlled self-assembly or deposition processes.

Inventive Principle:
Principle #3Local quality

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This configuration significantly increases the internal quantum efficiency of the LED, reaching up to 90% when the width-to-height ratio of the quantum well structure is between 0.8 and 1.5, and improves light-extraction efficiency through a trapezoid sidewall structure and protective benzocyclobutene layer.

Implementation Method 1

each of the nanorods has a quantum well structure and a second-type semiconductor layer. The quantum well structure is in contact with the first-type semiconductor layer

Methodology Applied
Scientific EffectQuantum confinement:

Implementation Method 2

The transparent planar layer is filled between the nanorods, in which a surface of the second-type semiconductor layer is exposed out of the transparent planar layer

Methodology Applied
Scientific EffectLight extraction:

Data Source

PatentUS9064998B2Light emitting diode and method for manufacturing the same
Publication Date: 2015.06.23 ENNOSTAR CORP
  • US9064998B2 patent drawing
  • US9064998B2 patent drawing
  • US9064998B2 patent drawing

AI summary

A light emitting diode includes a substrate, a first-type semiconductor layer, a nanorod layer and a transparent planar layer. The first-type semiconductor layer is disposed over the substrate. The nanorod layer is formed on the first-type semiconductor layer. The nanorod layer includes a plurality of nanorods and each of the nanorods has a quantum well structure and a second-type semiconductor layer. The quantum well structure is in contact with the first-type semiconductor layer, and the second-type semiconductor layer is formed on the quantum well structure. The transparent planar layer is filled between the nanorods. A surface of the second-type semiconductor layer is exposed out of the transparent planar layer.