Nanorod LED Structure for Higher Efficiency at Micro Pixel Scale
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Solution Overview
Problem
When LEDs are miniaturized to micro or nano units, the light emission efficiency of the LEDs may decrease.
Innovation Solution
A nanorod light-emitting device is developed, comprising a support layer, a first-type semiconductor nanocore, a mask layer, a light-emitting layer with a multi-quantum well structure, and a second-type semiconductor layer. This configuration enhances light emission efficiency by minimizing defects and optimizing growth surfaces.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Volume of moving object
If LEDs are miniaturized to micro or nano units, then the size of the LED is reduced, but the light emission efficiency decreases
Solution Approach 1:
The patent transitions from planar LED structures to vertically stacked nanorod structures with multiple functional layers arranged in the vertical dimension. This includes a first-type semiconductor nanocore, light-emitting layers, second-type semiconductor layers, and electrode layers stacked vertically, enabling efficient light emission in miniaturized form by utilizing three-dimensional space configuration
Solution Approach 2:
The patent employs composite material structures including Group III-V nitride semiconductor materials with different conductivity types (n-type and p-type), multi-quantum well structures, and various functional layer combinations. These composite structures maintain high light emission efficiency by optimizing material properties and interfaces in the nanoscale device
2Manufacturing precision
If the LED is miniaturized to maintain small pixel size, then the display resolution is improved, but the light emission efficiency and internal quantum efficiency decrease
Solution Approach 1:
The patent implements local quality optimization by creating distinct functional zones within the nanorod structure: the first-type semiconductor nanocore provides carrier injection, the light-emitting layers with multi-quantum well structures provide efficient radiative recombination, the second-type semiconductor layers provide carrier extraction, and electron blocking layers prevent carrier leakage. Each region is optimized for its specific function to maintain high internal quantum efficiency in miniaturized devices
Solution Approach 2:
The patent segments the LED into multiple discrete functional layers including first-type semiconductor nanocores, light-emitting layers, second-type semiconductor layers, and electrode layers. This segmentation allows independent optimization of each layer's properties and thickness to maximize overall device efficiency while maintaining small pixel dimensions
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The nanorod light-emitting device achieves an internal quantum efficiency greater than 20%, significantly improving light emission efficiency compared to miniaturized LEDs, while maintaining a high-quality semiconductor thin film with uniformity and few defects.
Implementation Method 1
a light-emitting layer having a multi-quantum well structure adjacent to a portion of the first-type semiconductor nanocore above the first height in the vertical direction
Data Source
AI summary
Provided is a nanorod light-emitting device including a support layer, a first-type semiconductor nanocore protruding from an upper surface of the support layer and including a semiconductor material doped as a first conductivity type, a mask layer on an upper surface of the support layer and extending to a first height of the first-type semiconductor nanocore in a vertical direction and adjacent to a surface of the first-type semiconductor nanocore, a light-emitting layer having a multi-quantum well structure adjacent to a portion of the first-type semiconductor nanocore above the first height in the vertical direction, and a second-type semiconductor layer adjacent to a surface of the light-emitting layer and including a semiconductor material doped as a second conductivity type.