Nanorod LED Multi-Quantum Well Structure for Miniaturization Loss

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Solution Overview

Problem

Miniaturization of LEDs to micro or nano units leads to a decrease in light emission efficiency.

Innovation Solution

A nanorod light-emitting device is developed, comprising a support layer, a first-type semiconductor nanocore, a mask layer, a light-emitting layer with a multi-quantum well structure, and a second-type semiconductor layer, which together enhance light emission efficiency.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Volume of moving object

If LEDs are miniaturized to micro or nano units, then the size of the light-emitting device is reduced, but the light emission efficiency decreases

Engineering Contradiction:
Improvesize of LEDVSAvoidlight emission efficiency
Core Design Contradiction:
Volume of moving objectVSLoss of energy

Solution Approach 1:

The light-emitting layer is divided into multiple quantum wells arranged in sequence, creating discrete light-emitting regions within the nanorod structure. This segmentation allows for optimized light emission at each interface while maintaining the overall miniaturized form factor, thereby improving light emission efficiency despite the reduced size.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The patent transitions from conventional planar LED structures to a vertical nanorod configuration with multi-quantum wells arranged along the vertical axis. This dimensional change enables efficient light emission in a compact volume by utilizing the vertical dimension for multiple light-emitting interfaces, thus maintaining high efficiency while achieving miniaturization.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

2Loss of energy

If a multi-quantum well structure is implemented, then light emission efficiency is improved, but device complexity increases

Engineering Contradiction:
Improvelight emission efficiencyVSAvoidstructure complexity
Core Design Contradiction:
Loss of energyVSDevice complexity

Solution Approach 1:

Multiple quantum wells are merged into a single vertical nanorod structure, integrating multiple light-emitting functions within one compact component. This merging approach achieves high light emission efficiency through multiple interfaces while avoiding the complexity of assembling separate devices, as the entire multi-quantum well structure is formed as an integrated nanorod.

Inventive Principle:
Principle #5Merging (Combining)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The nanorod light-emitting device achieves improved light emission efficiency, with an internal quantum efficiency greater than 20%, even when emitting red light.

Implementation Method 1

a first-type semiconductor nanocore protruding from an upper surface of the support layer and including a semiconductor material doped as a first conductivity type, a mask layer on an upper surface of the support layer and extending to a first height of the first-type semiconductor nanocore in a vertical direction and adjacent to a surface of the first-type semiconductor nanocore, a light-emitting layer having a multi-quantum well structure adjacent to a portion of the first-type semiconductor nanocore above the first height in the vertical direction, and a second-type semiconductor layer adjacent to a surface of the light-emitting layer and including a semiconductor material doped as a second conductivity type

Methodology Applied
Scientific EffectElectroluminescence: Electroluminescence

Data Source

PatentEP4507002A1Nanorod light-emitting device, method of manufacturing the same, and display apparatus including the same
Publication Date: 2025.02.12 SAMSUNG DISPLAY CO LTD
  • EP4507002A1 patent drawingFigure 1
  • EP4507002A1 patent drawingFigure 2
  • EP4507002A1 patent drawingFigure 3

AI summary

Provided is a nanorod light-emitting device including a support layer, a first-type semiconductor nanocore protruding from an upper surface of the support layer and including a semiconductor material doped as a first conductivity type, a mask layer on an upper surface of the support layer and extending to a first height of the first-type semiconductor nanocore in a vertical direction and adjacent to a surface of the first-type semiconductor nanocore, a light-emitting layer having a multi-quantum well structure adjacent to a portion of the first-type semiconductor nanocore above the first height in the vertical direction, and a second-type semiconductor layer adjacent to a surface of the light-emitting layer and including a semiconductor material doped as a second conductivity type.