Nanoscale Channel Fabrication via Angled Deposition
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Solution Overview
Problem
Current methods for creating nanostructures less than 10 nanometers in size face challenges with photoresist layer thickness, accuracy, and residue issues, leading to inconsistencies and high costs in processing and yield.
Innovation Solution
A method involving a substrate with a photoresist mask layer, where the substrate is rotated to deposit thin film layers at specific angles, creating nanoscale channels without etching or stripping, allowing precise control over nanostructure formation and material selection for each side of the channels.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Strength
If a thick photoresist layer is used as a mask, then it is easier to maintain structural integrity during processing, but it becomes difficult to transfer the pattern accurately and creates residue that reduces manufacturing precision
Solution Approach 1:
The photoresist mask layer is divided into multiple thinner sub-layers, each serving as a separate mask for sequential deposition steps. This segmentation allows each layer to be thin enough for accurate pattern transfer while collectively providing sufficient structural support, and enables complete removal of each layer after use without leaving residue that would compromise subsequent steps.
Solution Approach 2:
Multiple photoresist layers are prepared and positioned in advance before the deposition process begins. Each layer is pre-configured with the appropriate thickness and pattern for its specific deposition step, allowing the process to proceed sequentially without requiring re-masking or re-positioning during deposition, thereby maintaining precision while ensuring structural integrity is established beforehand.
2Ease of manufacture
If conventional evaporation stripping or etching methods are used, then nanostructures can be formed, but processing costs increase and yield consistency decreases due to difficulty in controlling processing parameters
Solution Approach 1:
The photoresist mask layers are designed to be self-removable through sequential deposition processes. Each deposited film layer automatically serves as the stripping agent for the previous photoresist layer, eliminating the need for separate etching or stripping steps. This self-service mechanism reduces processing complexity, improves yield consistency, and maintains ease of manufacture while enhancing productivity.
Solution Approach 2:
The photoresist mask layers are intentionally designed as temporary, disposable components that are completely removed after serving their masking function. Each layer is discarded after its specific deposition step is complete, with no residue remaining to affect subsequent processing. This approach eliminates the cost and complexity associated with recovering or reusing masks, while improving processing efficiency and yield consistency.
3Manufacturing precision
If small-sized patterned photoresist layers are created, then fine groove structures can be prepared, but the photoresist layer becomes unstable and prone to collapse during processing
Solution Approach 1:
The masking function is segmented across multiple thin photoresist layers rather than relying on a single thick layer. Each thin layer is stable enough to maintain its small-sized patterned structure during its specific deposition step, and the sequential nature of the process ensures that each layer is removed before the next is applied, preventing cumulative instability while maintaining manufacturing precision.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables the precise formation of nanoscale channels and structures with controlled dimensions and material composition, improving processing efficiency and reducing inaccuracies and costs.
Implementation Method 1
rotating the substrate with an extending direction of the stripe masks as a rotation axis, a first angle between the substrate and a horizontal direction equals θ1, depositing a first thin film layer on the substrate in a vertical direction
Data Source
AI summary
A method of making nanoscale channels including: providing a substrate, locating a photoresist mask layer on the substrate, the thickness of the photoresist mask layer equals H; forming a patterned mask layer by exposing and developing the photoresist mask layer, the patterned mask layer includes a plurality of parallel and spaced stripe masks, the spacing between adjacent stripe masks equals L; depositing a first thin film layer on the substrate in a first direction, the thickness of the first thin film layer equals D, a first angle between the first direction and a direction in the thickness of the stripe masks equals θ1, θ1<tan−1(L/H); depositing a second thin film layer on the substrate in a second direction, a second angle between the second direction and the direction in the thickness of the stripe masks equals θ2, θ2<tan−1[L/(H+D)], 0<Htanθ1+(H+D)tanθ2−L<10 nm.