Nanosheet Source/Drain Contact Structure With Silicide Layer
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Solution Overview
Problem
Existing semiconductor devices face challenges in improving reliability and reducing resistance in source/drain contacts, which affect the performance and scalability of multi-gate transistors.
Innovation Solution
The semiconductor device incorporates a silicide layer formed by multiple films in the source/drain region to reduce contact resistance, enhancing the reliability and performance of the device.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a simple source/drain contact structure is used, then the device structure is simpler, but the contact resistance is higher and reliability is reduced
Solution Approach 1:
The source/drain contact structure is divided into multiple distinct layers including a first contact layer, silicide layer, second contact layer, and third contact layer. Each layer serves a specific function in reducing contact resistance and improving reliability, with the silicide layer providing low-resistance pathways and the capping layer protecting the underlying structures.
Solution Approach 2:
The source/drain contact employs a composite multi-layer structure combining different materials with complementary properties. The silicide layer provides low electrical resistance, the capping layer offers protective characteristics, and intermediate layers provide transition and adhesion functions, creating a composite structure that achieves both low resistance and high reliability.
2Reliability
If the source/drain contact resistance is reduced, then the device performance is improved, but additional processing steps and structure complexity increase
Solution Approach 1:
The silicide layer is formed in advance within the source/drain region before final contact formation. This preliminary silicidation creates low-resistance pathways ahead of time, ensuring that when the contact is subsequently formed, the resistance is already minimized, improving both contact reliability and facilitating easier manufacturing.
Solution Approach 2:
Intermediate layers are introduced between the contact layers and the underlying semiconductor structures. These intermediary layers serve as transition zones that facilitate smooth electrical and mechanical transitions, reducing contact resistance while providing a buffer that simplifies the overall manufacturing process by decoupling different fabrication steps.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The implementation of a silicide layer between the source/drain region and contact improves the reliability and reduces resistance, thereby enhancing the overall performance and scalability of the semiconductor device.
Implementation Method 1
a silicide layer between the source/drain region and the source/drain contact wherein the silicide layer is in contact with the second doping layer and extends to an upper surface of the source/drain region
Data Source
AI summary
A semiconductor device comprises an active pattern on a substrate; a plurality of nanosheets spaced apart from each other; a gate electrode surrounding each of the nanosheets; a field insulating layer surrounding side walls of the active pattern; an interlayer insulating layer on the field insulating layer; a source/drain region comprising a first doping layer on the active pattern, a second doping layer on the first doping layer, and a capping layer forming side walls adjacent to the interlayer insulating layer; a source/drain contact electrically connected to, and on, the source/drain region, and a silicide layer between the source/drain region and the source/drain contact which contacts contact with the second doping layer and extends to an upper surface of the source/drain region. The capping layer extends from an upper surface of the field insulating layer to the upper surface of the source/drain region along side walls of the silicide layer.