Gate-All-Around Transistor Dipole Oxide for Threshold Voltage Separation
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Solution Overview
Problem
In gate all around transistors, it is challenging to achieve transistors with different selected threshold voltages without introducing unwanted variations in threshold voltages.
Innovation Solution
Incorporating dipole layers at the interfacial dielectric layer on semiconductor nanosheets, formed in a way that reduces unwanted variations in threshold voltages, allowing for transistors with distinct threshold voltages by adjusting the dipole effect on the gate electrode.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If dipole layers are incorporated to achieve different threshold voltages, then threshold voltage control precision is improved, but device complexity increases
Solution Approach 1:
The patent applies local quality by incorporating dipole layers selectively at specific interfaces (e.g., between gate dielectric and channel) rather than uniformly throughout the device. This localized modification allows precise threshold voltage tuning in specific transistor regions while maintaining simplicity in other areas, resolving the contradiction between control precision and device complexity
Solution Approach 2:
The patent utilizes parameter changes by modifying the dipole moment, concentration, or orientation of dipole layers to achieve different threshold voltage values. By changing these physical parameters of the dipole layer, the invention enables continuous threshold voltage adjustment without fundamentally altering the device structure, thus improving control precision while managing complexity
2Reliability
If dipole layers are incorporated to achieve different threshold voltages, then device performance is improved, but manufacturing complexity increases
Solution Approach 1:
The patent applies preliminary action by incorporating dipole layers during the gate dielectric formation process or as a separate preparatory step before transistor fabrication. This advance incorporation simplifies subsequent manufacturing steps and ensures consistent threshold voltage control, improving device performance while managing manufacturing complexity through process integration
Solution Approach 2:
The dipole layer serves as an intermediary between the gate dielectric and the channel, mediating the electric field distribution to achieve desired threshold voltages. This intermediary layer provides a simple and effective mechanism for threshold voltage control that can be integrated into existing manufacturing processes, improving performance without excessive manufacturing complexity
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach increases device performance and yield by reliably achieving different threshold voltages in transistors, ensuring no unwanted dipole layer formation in unintended transistors, thus maintaining consistent and improved transistor performance.
Implementation Method 1
The incorporation of dipole layers at the interfacial dielectric layer on semiconductor nanosheets allows for the achievement of different threshold voltages by reducing unwanted variations
Data Source
AI summary
A method for processing an integrated circuit includes forming first and second gate all around transistors. The method forms a dipole oxide in the first gate all around transistor without forming the dipole oxide in the second gate all around transistor. This is accomplished by entirely removing an interfacial dielectric layer and a dipole-inducing layer from semiconductor nanosheets of the second gate all around transistor before redepositing the interfacial dielectric layer on the semiconductor nanosheets of the second gate all around transistor.