Nanosheet FET Passivation Layers for Dangling-Bond Current Loss
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Solution Overview
Problem
The scaling down of semiconductor devices increases complexity and resistance in active regions, leading to reduced drive current due to surface defects from dangling bonds, which existing technologies have not effectively addressed.
Innovation Solution
The implementation of passivation layers comprising fluorine, nitrogen, hydrogen, and chlorine atoms on the active regions of FET devices to react with and eliminate dangling bonds, thereby improving surface quality and drive current.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If semiconductor devices are scaled down to increase storage capacity and processing speed, then device density and performance are improved, but surface defects from dangling bonds increase leading to reduced drive current
Solution Approach 1:
The patent applies this principle by using fluorine-containing substances to react with harmful dangling bonds on the semiconductor surface. The fluorine atoms bond with the dangling bonds, converting the harmful surface defects into beneficial passivated structures that improve drive current by 20% to 50% while maintaining the scaled-down device dimensions
Solution Approach 2:
The patent changes the chemical composition parameter of the semiconductor surface by introducing fluorine-containing substances. This parameter change transforms the surface chemistry from having reactive dangling bonds to having stable fluorinated bonds, thereby improving electrical performance without changing the physical device dimensions
2Length of moving object
If semiconductor devices are scaled down, then device dimensions are reduced, but manufacturing complexity increases
Solution Approach 1:
The patent applies self-service by utilizing the natural reactivity of fluorine-containing substances with dangling bonds. The fluorine atoms automatically bond with exposed silicon atoms on the etched surface, providing self-passivation without requiring complex additional manufacturing steps or precise control of deposition parameters
3Ease of manufacture
If existing technologies are used without fluorine treatment, then manufacturing process is simpler, but surface defects remain causing reduced drive current
Solution Approach 1:
The fluorine-containing substance acts as an intermediary that bridges the gap between the etched semiconductor surface and the desired electrical performance. The fluorine atoms mediate the interaction by bonding to dangling bonds, thereby improving drive current while adding minimal process complexity
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The use of passivation layers enhances drive current by 20% to 50% by mitigating surface defects, improving the performance of FET devices.
Implementation Method 1
passivation layers comprising fluorine, nitrogen, hydrogen, and chlorine atoms on the active regions of FET devices to react with and eliminate dangling bonds
Data Source
AI summary
The structure of a semiconductor device with passivation layers on active regions of FET devices and a method of fabricating the semiconductor device are disclosed. The semiconductor device includes a substrate, first and second source/drain (S/D) regions disposed on the substrate, nanostructured channel regions disposed between the first and second S/D regions, a passivation layer, and a nanosheet (NS) structure wrapped around the nanostructured channel regions. Each of the S/D regions have a stack of first and second semiconductor layers arranged in an alternating configuration and an epitaxial region disposed on the stack of first and second semiconductor layers. A first portion of the passivation layer is disposed between the epitaxial region and the stack of first and second semiconductor layers and a second portion of the passivation layer is disposed on sidewalk of the nanostructured channel regions