Nanosheet Forksheet Gate Structure for Lower Parasitic Capacitance
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Solution Overview
Problem
The increasing density and reduced dimensions of integrated circuits in the semiconductor industry make it challenging to adjust component characteristics, particularly in managing parasitic capacitance across devices with varying metal dimensions.
Innovation Solution
The implementation of a semiconductor device structure featuring a forksheet-like dielectric wall structure and an embedded cut metal gate (CMG) isolation structure, which minimizes gate-to-source/drain parasitic capacitance by optimizing the dielectric wall and gate electrode layer configuration.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If the density of integrated circuit elements is increased and dimensions are reduced, then more components can be integrated into a given area, but parasitic capacitance management becomes more difficult
Solution Approach 1:
The gate electrode is segmented into multiple portions (first gate electrode portion, second gate electrode portion, third gate electrode portion) separated by dielectric walls. This segmentation allows independent control and optimization of different gate regions, enabling better management of parasitic capacitance while maintaining high integration density through the multi-bridge channel structure
Solution Approach 2:
Different regions of the gate electrode are given different properties through the segmented structure. The first, second, and third gate electrode portions can have different materials, thicknesses, or doping levels optimized for specific functional requirements, allowing local optimization of electrical characteristics including parasitic capacitance control in high-density configurations
2Adaptability or versatility
If metal dimensions are varied across devices, then device functionality can be optimized, but parasitic capacitance becomes difficult to compromise among different devices
Solution Approach 1:
The multi-bridge channel structure with segmented gate electrodes provides a universal platform that can accommodate different device configurations and functionalities. The standardized segmented architecture allows various metal dimension variations while maintaining consistent parasitic capacitance management through the repeating pattern of dielectric walls and gate portions
Solution Approach 2:
The invention transitions from planar gate structures to three-dimensional multi-bridge channel structures with vertical stacking. This dimensional change allows metal dimensions to be varied in the horizontal plane for functionality optimization while the vertical segmentation through dielectric walls maintains consistent parasitic capacitance characteristics across different device configurations
Data Source
AI summary
Various embodiments of the present disclosure provide a semiconductor device structure. In one embodiment, the semiconductor device structure includes a dielectric wall disposed over a substrate, first and second metal gate structure portions respectively disposed at either side of the dielectric wall. Each first and second metal gate structure portion includes a plurality of semiconductor layers vertically stacked and separated from each other, a high-K (HK) dielectric layer disposed to surround at least three surfaces of each of the semiconductor layers, and a gate electrode layer disposed between two neighboring semiconductor layers. The semiconductor device structure also includes a metal layer disposed on two opposing sidewalls of the dielectric wall.