Nanosheet Gate Structure With Thin Silicon Work Function Layer
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Solution Overview
Problem
The challenge in semiconductor manufacturing is achieving further size reduction of gate-all-around transistors while maintaining effective gate control, as existing work function adjustment layers with aluminum-containing materials hinder down-scaling due to their thickness requirements.
Innovation Solution
Employing a silicon-containing work function adjustment layer with a reduced thickness to achieve the desired band-edge work function, allowing for further down-scaling of semiconductor devices by replacing aluminum-containing materials with silicon-based alternatives.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Length of moving object
If aluminum-containing work function adjustment layers are used, then desired band-edge work function is achieved, but layer thickness cannot be reduced further hindering device down-scaling
Solution Approach 1:
The patent changes the material composition parameter of the work function adjustment layer from aluminum-containing materials to silicon-containing materials. This parameter change enables the layer to achieve the desired band-edge work function at a reduced thickness, allowing device down-scaling while maintaining gate control effectiveness. The silicon-containing material provides the necessary work function characteristics with thinner layer thickness compared to conventional aluminum-based materials.
2Productivity
If device dimensions are scaled down, then production efficiency improves and costs lower, but manufacturing process complexity increases
Solution Approach 1:
The patent employs parameter changes in material composition to simplify the manufacturing process at scaled dimensions. By using silicon-containing work function adjustment layers instead of aluminum-containing layers, the patent achieves the desired electrical characteristics with reduced thickness, which simplifies subsequent processing steps and reduces manufacturing complexity at advanced technology nodes.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The silicon-containing work function adjustment layer enables smaller semiconductor device dimensions while maintaining gate control, facilitating advanced technology nodes with improved performance and efficiency.
Implementation Method 1
a silicon-containing work function adjustment layer with a reduced thickness to achieve the desired band-edge work function
Data Source
AI summary
The present disclosure provides a semiconductor structure and a method for forming the same. The method includes: forming a first nanosheet channel structure and a second nanosheet channel structure, parallel to the first nanosheet channel structure, over a substrate; depositing a first high-k dielectric layer and a second high-k dielectric layer on the first nanosheet channel structure and the second nanosheet channel structure, respectively; introducing a silicon-based precursor to deposit a work function adjustment layer on the first and second high-k dielectric layers, wherein the work function adjustment layer comprises a silicon portion separating the first and second high-k dielectric layers, wherein the silicon portion comprises a void between the first nanosheet channel structure and the second nanosheet channel structure; performing an oxidation operation on the silicon portion to form an oxide coating on the silicon portion; and depositing a metal layer over the oxide coating.