Nanosheet Structure With Stacked Junction Diodes for Voltage Tolerance
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Solution Overview
Problem
Nanosheet devices face challenges in voltage tolerance and control, particularly in high-voltage applications and high-speed conditions, limiting their use in advanced semiconductor integrated circuits.
Innovation Solution
Incorporating multiple stacked junction diodes in the semiconductor substrate below the nanosheet devices to increase voltage tolerance, allowing for improved performance in high-voltage applications and enhanced control under high-speed conditions.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If nanosheet devices are used in low-voltage IC components, then device density and integration are improved, but voltage tolerance deteriorates
Solution Approach 1:
The patent embeds junction diodes within the nanosheet device structure itself, nesting protective elements inside the active device. The junction diodes are formed by doping regions within the semiconductor layers that make up the nanosheet channel, allowing the protection mechanism to be integrated without adding external components that would reduce density.
Solution Approach 2:
The patent introduces junction diodes as intermediary elements that mediate between the high-density nanosheet structure and high-voltage stress. These diodes act as protective intermediaries that clamp voltage excursions and prevent breakdown, allowing the nanosheet device to operate in high-voltage environments without compromising its dense integrated structure.
2Reliability
If nanosheet devices are designed for high-voltage applications, then voltage tolerance is improved, but device complexity increases
Solution Approach 1:
The patent merges the protective function into the existing nanosheet device structure by forming junction diodes using the same semiconductor layers and doping processes. The n-type and p-type doped regions are integrated within the alternating semiconductor layer structure, combining the channel function and voltage protection in a single unified structure rather than adding separate protective components.
Solution Approach 2:
The semiconductor layers in the nanosheet device serve multiple functions: they form the conductive channels for device operation and simultaneously create the junction diodes for voltage protection. The same structural elements that enable high-density integration also provide the voltage tolerance needed for high-voltage applications, eliminating the need for separate protection structures.
3Productivity
If traditional nanosheet devices are used in high-speed conditions, then device density is maintained, but control capability deteriorates
Solution Approach 1:
The junction diodes provide automatic feedback protection by becoming conductive when voltage exceeds safe operating levels. This inherent feedback mechanism detects voltage stress and automatically activates protection without external control, maintaining ease of operation while enabling high-speed applications where rapid protection response is critical.
Data Source
AI summary
A semiconductor structure includes a substrate and a stack of p-n junction structures embedded in the substrate. The semiconductor structure includes a semiconductor fin protruding from the substrate. The semiconductor structure includes a pair of source/drain structures disposed in the semiconductor fin. The semiconductor structure includes a gate structure over a channel region of the semiconductor fin and interposed between the pair of source/drain structures.