Nanosheet Power Bar Layout for Backside Power Connections
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Solution Overview
Problem
Nanosheet technology faces challenges in scaling down due to device interference and difficulty in forming connections to a backside power network as devices become smaller and closer together.
Innovation Solution
A semiconductor device structure with a power bar oriented parallel to nanodevices, connected to source/drain contacts through dielectric liners, and extending to a backside power rail, facilitating connections between nanodevices.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If nanosheet devices are scaled down and placed closer together, then device density is improved, but device interference increases and connection formation becomes more difficult
Solution Approach 1:
The patent introduces a power bar structure that extends in a lateral dimension between adjacent nanosheet devices, providing a new spatial pathway for power connections. This lateral extension allows connections to be formed without increasing vertical complexity, accommodating higher device density while maintaining manufacturability through planar integration.
Solution Approach 2:
The power bar acts as an intermediary structure between source/drain contacts and the backside power network. By introducing this intermediate conductive element, the patent simplifies the connection architecture, enabling power distribution to densely packed nanosheet devices without requiring direct complex routing between each contact and the power network.
2Area of stationary object
If devices are placed closer together, then area utilization is improved, but forming connections to backside power network becomes more difficult
Solution Approach 1:
The power bar extends laterally between devices in the plane of the substrate, utilizing the horizontal dimension to provide connection pathways. This approach maintains compact vertical stacking for high area utilization while creating adequate lateral space for power connection formation without increasing overall device footprint.
Solution Approach 2:
The power distribution network is segmented into discrete power bar elements positioned between specific nanosheet devices. Each power bar serves as an independent connection segment, allowing localized optimization of connection formation while maintaining overall high device density and area utilization.
3Length of stationary object
If power connections are made with higher aspect ratio, then vertical integration is improved, but resistance increases
Solution Approach 1:
The power bar provides a lateral conduction pathway that reduces the effective current path length compared to purely vertical connections. By extending horizontally between devices, the power bar creates a lower aspect ratio conduction path that maintains vertical integration benefits while reducing resistance through increased lateral spread and reduced current density.
Data Source
AI summary
According to the embodiment of the present invention, a semiconductor device includes a first nanodevice comprised of a plurality of first transistors and a second nanodevice comprised of a plurality of second transistors. The first nanodevice includes a first source/drain contact. The second nanodevice includes a second source/drain contact. The second nanodevice is located adjacent to and parallel to the first nanodevice. A power bar is located between the first nanodevice and the second nanodevice. The power bar is connected to the second source/drain contact. A top surface of the power bar and the second source/drain contact are substantially in a same plane. The top surface of the power bar and the second source/drain contact are substantially a same height.