3D Nanosheet Memory Cell Structure With Pyramid Contact Nodes

The patent transitions from planar to three-dimensional stacking of memory cells, utilizing the vertical dimension to increase memory capacity. Multiple memory cells are stacked vertically to form a three-dimensional array, thereby increasing memory cell density while managing parasitic capacitance through careful spatial arrangement and isolation structures.

The patent divides the memory device into multiple stacked memory cell layers, with each layer containing switching elements, storage elements, and conductive lines. This segmentation allows independent control and isolation of each memory cell layer, reducing parasitic capacitance between adjacent cells while maintaining high integration density.

The patent implements a nested structure where horizontal and vertical conductive lines are intertwined to form a three-dimensional grid. The nano sheets are positioned at intersections of these conductive lines, creating a nested arrangement that maximizes memory cell density while using standardized manufacturing processes for each component layer.

The conductive lines serve multiple functions: they provide electrical connections, define the geometry of memory cells, and act as alignment references for nano sheet positioning. This multi-functionality reduces the number of separate manufacturing steps and simplifies the overall fabrication process despite the complex three-dimensional architecture.