Nano Sheet Transistor With Varying Thickness For Multi-Threshold Voltage
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Solution Overview
Problem
Current semiconductor devices face challenges in optimizing transistor structure to achieve both fast operating speed and operational accuracy, particularly in controlling current and realizing multi-threshold voltages.
Innovation Solution
The semiconductor device incorporates nano sheets with varying thicknesses, strategically positioned and connected to source/drain areas, allowing for the adjustment of channel width and threshold voltage through the quantum confinement effect, enabling multi-threshold voltage capabilities.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If conventional transistor structures are used, then manufacturing process is simple, but current control capability and multi-threshold voltage realization are insufficient
Solution Approach 1:
The channel region is segmented into multiple independent nano sheets with different thicknesses, allowing each sheet to provide a distinct threshold voltage. This segmentation enables multi-threshold voltage operation while maintaining a systematic structure that can be integrated into conventional transistor architectures.
Solution Approach 2:
Different regions of the channel are assigned different nano sheet thicknesses to create local variations in threshold voltage. Thinner nano sheets provide lower threshold voltages while thicker sheets provide higher threshold voltages, allowing optimized current control in different parts of the device.
2Ease of operation
If nano sheet thickness is increased, then threshold voltage decreases, but channel current control precision is reduced
Solution Approach 1:
Instead of using a single thick nano sheet, the channel is divided into multiple thinner nano sheets with precisely controllable thicknesses. This segmentation allows each sheet to be manufactured within tighter thickness tolerances while collectively achieving the desired threshold voltage range.
Solution Approach 2:
The solution moves from controlling threshold voltage through a single dimension (thickness of one sheet) to controlling it through multiple dimensions (thicknesses of multiple sheets). This allows independent optimization of each sheet's thickness for precise current control.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach allows for precise control of channel current and the realization of multiple threshold voltages, enhancing the performance and accuracy of semiconductor devices by leveraging the quantum confinement effect in nano sheet structures.
Implementation Method 1
allowing for the adjustment of channel width and threshold voltage through the quantum confinement effect, enabling multi-threshold voltage capabilities
Data Source
AI summary
A semiconductor device includes a semiconductor substrate. A first fin extends in a first direction. A first nano sheet structure includes at least two first nano sheets which extend in the first direction parallel to an upper surface of the first fin. A second fin extends in the first direction. A second nano sheet structure includes at least two second nano sheets which extend in the first direction parallel to an upper surface of the second fin. At least one of the at least two first nano sheets has a different thickness from at least one of the at least two second nano sheets.