Varying-Width Nanosheet Transistors for Speed-Power Tradeoffs

Solution Overview

Problem

Transistor technologies face a trade-off between processing speed and power efficiency due to the size of the channels, with larger channels enabling faster processing but requiring more power, and smaller channels being more energy efficient but carrying less current.

Innovation Solution

Implementing nanosheet channels with varying widths and heights in FinFETs to optimize current flow, allowing for flexible design choices that balance speed and power efficiency by adjusting channel dimensions based on specific requirements.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Speed

If larger channels are used in transistors, then processing speed is improved, but power consumption increases

Engineering Contradiction:

Improveprocessing speedVSAvoidpower consumption

Core Design Contradiction:

SpeedVSUse of energy by moving object

Solution Approach 1:

The patent applies local quality by creating nanosheet channels with spatially varying widths along the channel length. Different sections of the nanosheet have different widths to optimize local current density and electric field distribution. This allows the channel to achieve high processing speed in critical regions while maintaining lower power consumption in other regions, resolving the contradiction between speed and power usage.

Inventive Principle:

Principle #3Local quality

Solution Approach 2:

The patent implements dynamics by making the nanosheet channel width variable rather than uniform. The width changes dynamically along the channel length, allowing the device to adapt current flow characteristics to different operational requirements. This dynamic geometric variation enables the transistor to achieve optimal performance balance between speed and power efficiency.

Inventive Principle:

Principle #15Dynamics

2Use of energy by moving object

If smaller channels are used in transistors, then power efficiency is improved, but current carrying capacity decreases

Engineering Contradiction:

Improvepower efficiencyVSAvoidcurrent carrying capacity

Core Design Contradiction:

Use of energy by moving objectVSQuantity of substance

Solution Approach 1:

The patent applies local quality by creating nanosheet channels with spatially varying widths along the channel length. Different sections of the nanosheet have different widths to optimize local current density and electric field distribution. This allows the channel to achieve high processing speed in critical regions while maintaining lower power consumption in other regions, resolving the contradiction between speed and power usage.

Inventive Principle:

Principle #3Local quality

Solution Approach 2:

The patent implements dynamics by making the nanosheet channel width variable rather than uniform. The width changes dynamically along the channel length, allowing the device to adapt current flow characteristics to different operational requirements. This dynamic geometric variation enables the transistor to achieve optimal performance balance between speed and power efficiency.

Inventive Principle:

Principle #15Dynamics

Data Source

PatentUS12593504B2Transistors with varying width nanosheet

Publication Date: 2026.03.31 TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD

AI summary

The present disclosure relates to an integrated circuit. In one implementation, the integrated circuit may include a semiconductor substrate; at least one source region comprising a first doped semiconductor material; at least one drain region comprising a second doped semiconductor material; at least one gate formed between the at least one source region and the at least one drain region; and a nanosheet formed between the semiconductor substrate and the at least one gate. The nanosheet may be configured as a routing channel for the at least one gate and may have a first region having a first width and a second region having a second width. The first width may be smaller than the second width.