Nanostructure Array Patterning with Spacer Masks Below 20 Nm
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Solution Overview
Problem
The self-aligned multiple patterning process, particularly in double patterning, faces challenges such as spacer structure stability, profile acceptability, and material etching issues, which lead to structure imperfections and limitations in further scaling.
Innovation Solution
A method is introduced that involves forming an array of nanostructures by selectively applying spacer structures on the sidewalls of sacrificial nanostructures, allowing for etching and subsequent mask formation, all within a single processing chamber, thereby improving process control and reducing defects.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If spacer structures are formed by deposition in different processing chambers, then film deposition can be completed, but process control becomes difficult and costs increase
Solution Approach 1:
The patent combines deposition and etching processes into a single processing chamber, eliminating the need for multiple chambers. This integration maintains process control while reducing system complexity and costs.
Solution Approach 2:
The processing chamber is designed to perform multiple functions - both deposition and etching operations can be conducted in the same chamber, making the system more versatile and reducing the number of required chambers.
2Quantity of substance
If original array structures are removed to leave only spacers, then structure density doubles, but spacer stability and profile acceptability become issues
Solution Approach 1:
The patent performs preliminary etching of the substrate before removing the original structures. This pre-etching prevents unwanted etching of the underlying material when original structures are removed, ensuring spacer stability and proper profiles.
Solution Approach 2:
The patent introduces a protective etching step that cushions against potential damage to the substrate. By etching the substrate in advance, the system prepares for the subsequent removal of original structures without causing harm to the underlying material.
3Ease of manufacture
If original structures are removed without preliminary etching, then only spacers remain, but underlying material is attacked and topography differences occur
Solution Approach 1:
The patent performs preliminary etching of the substrate before removing original structures. This pre-etching prevents unwanted etching of the underlying material when original structures are removed, ensuring uniform topography.
Solution Approach 2:
The patent applies a counter-action by etching the substrate in advance to prevent the harmful effect of unwanted etching that would occur when original structures are removed. This preliminary anti-action protects the underlying material from damage.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enhances process control, reduces defects such as footing and bird's beak, and allows for the formation of nanostructures with dimensions below 20 nm, enabling more efficient and sustainable scaling of electronic devices.
Implementation Method 1
isotropic modification of exposed surfaces of the array of first sacrificial nanostructures and of the first material layer
Implementation Method 2
anisotropic etching of modified material from top surfaces of the first material layer and the first sacrificial nanostructures
Data Source
AI summary
A method for forming an array of nanostructures is presented. The method comprising: providing a layer structure including an array of first sacrificial nanostructures arranged on a supporting layer structure comprising at least a first material layer and a substrate; selectively applying spacer structures on sidewalls of the array of first sacrificial nanostructures; selectively etching away the array of first sacrificial nanostructures such that the spacer structures form an array of second sacrificial nanostructures; etching the first material layer using the array of second sacrificial nanostructures as an etching mask; and removing the array of second sacrificial nanostructures thereby exposing an array of nanostructures formed from the first material layer.