Nanostructure Light Emitter With Integrated Transistor Current Control
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Solution Overview
Problem
Existing semiconductor light emitting devices lack a switching element to control current flow, leading to inefficiencies in light emission and potential dislocation issues due to lattice constant differences between semiconductor layers.
Innovation Solution
A light emitting device incorporating a transistor with nanostructures that can emit light, where the transistor controls current injection into the nanostructures, reducing dislocation and allowing for precise control of light emission, and featuring a layered structure with semiconductor layers and a light propagation layer to enhance light output.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a semiconductor light emitting element is formed with multiple semiconductor layers having different lattice constants, then light emission function is achieved, but dislocation occurs due to lattice constant difference
Solution Approach 1:
A buffer layer is introduced between the first semiconductor layer and the second semiconductor layer. This buffer layer acts as an intermediary that reduces the lattice constant mismatch between layers, thereby suppressing dislocation while maintaining the light emission function of the multi-layer structure.
2Ease of manufacture
If transistor and light emitting unit are provided on separate substrates, then each component can be optimized independently, but device size increases
Solution Approach 1:
The transistor and light emitting unit are integrated on a single substrate. The transistor is formed in the first semiconductor layer while the light emitting unit is formed in the second semiconductor layer, both on the same substrate. This merging reduces device size while maintaining independent optimization capabilities through layered structure design.
3Illumination intensity
If current is injected into nanostructures for light emission, then light output is achieved, but current leakage occurs
Solution Approach 1:
The buffer layer serves as an intermediary structure that provides electrical isolation and prevents current leakage from the transistor region to the light emitting unit region. This allows efficient current injection for light emission while minimizing energy loss through leakage paths.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution enables efficient control of light emission, reduces dislocation, and allows for downsizing by integrating the transistor and light emitting unit on a single substrate, while also suppressing current leakage and enhancing laser oscillation.
Implementation Method 1
a light emitting layer that is provided between the second semiconductor layer and the third semiconductor layer and can emit a light with injection of a current
Implementation Method 2
semiconductor lasers using nanostructures (nanocolumns) are expected to realize high-power light emission at narrow radiation angles due to the effect of photonic crystal by the nanostructures
Data Source
AI summary
A light emitting is provided including a switching element. The light emitting device includes a light emitting unit having a plurality of nanostructures that can emit lights with injection of currents, and a transistor provided in correspondence with the light emitting unit and controlling amounts of the currents injected in the nanostructures.