Nanostructure Fabrication via Dual-Angle Deposition
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Solution Overview
Problem
Current methods for creating nanostructures less than 10 nanometers in size face challenges with photoresist layer thickness, residue issues, and accuracy in forming small dimension structures, leading to difficulties in controlling costs, consistencies, and yields.
Innovation Solution
A method involving a substrate with a photoresist mask layer, where the substrate is rotated to specific angles for depositing thin film layers, allowing for precise formation of nanoscale channels and structures without etching or stripping, using parameters that ensure precise spacing and material deposition on both sides of the mask.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Strength
If a thick photoresist layer is used as a mask to prepare small dimension structures, then the photoresist layer is easier to stand up and less prone to collapse, but it is difficult to transfer the photoresist layer accurately
Solution Approach 1:
The photoresist layer is divided into multiple thinner layers (first photoresist layer and second photoresist layer), each serving specific functions. The first layer provides structural support while the second layer enables accurate pattern transfer, resolving the contradiction between stability and transfer accuracy.
Solution Approach 2:
The solution moves from a single-layer photoresist approach to a multi-layer approach, adding the dimension of layer differentiation. This allows optimization of each layer's thickness for its specific purpose: the first layer for mechanical stability and the second layer for precise pattern transfer.
2Manufacturing precision
If a thin photoresist layer is used as a mask to prepare small dimension structures, then the photoresist layer is easier to transfer, but it is difficult to stand up and easy to collapse
Solution Approach 1:
The photoresist system is segmented into two layers with different thicknesses and functions. The thicker first layer provides the mechanical strength needed to stand up, while the thinner second layer enables accurate pattern transfer, simultaneously achieving both stability and transferability.
Solution Approach 2:
The first photoresist layer is formed and patterned first to create a stable structural framework. This preliminary action establishes the mechanical support needed before forming and patterning the second layer, ensuring both layers can be processed successfully.
3Ease of manufacture
If the photoresist is removed by peeling or etching, then the photoresist can be eliminated, but small amount of residue remains which causes the small dimension structures to be inaccurate
Solution Approach 1:
The harmful residue is extracted and eliminated by designing the photoresist system so that the first layer can be completely removed via selective etching, taking out the source of contamination before the second layer is formed and patterned.
Solution Approach 2:
The first photoresist layer acts as an intermediary that is completely removed after serving its structural purpose. This intermediary layer enables the formation of accurate patterns in the second layer without leaving residue that would contaminate the final structure.
4Manufacturing precision
If traditional evaporation stripping method or etching method is used to make less than 10 nanometers structures, then the structures can be formed, but the processing devices have difficulty controlling costs, consistencies, yields, and other processing parameters
Solution Approach 1:
The invention changes the critical parameters from photoresist thickness (which is difficult to control at sub-10nm scales) to deposition angles and layer thickness ratios. These parameter changes enable precise nanostructure formation using standard deposition equipment without requiring specialized processing devices, thereby reducing device complexity while maintaining manufacturing precision.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method enables the precise control and formation of nanoscale channels and structures with adjusted widths, avoiding the limitations of traditional methods by ensuring accurate placement and material selection on both sides of the nanoscale channels, enhancing the precision and accuracy of nanostructure creation.
Implementation Method 1
depositing a first thin film layer (13) on the substrate (10)... depositing a second thin film layer (14) on the substrate (10)
Data Source
AI summary
A method of making nanostructures including: locating a photoresist mask layer on a substrate, the thickness of the photoresist mask layer is H; forming a patterned mask layer includes a plurality of stripe masks, a spacing distance between adjacent stripe masks equals L; depositing a first thin film layer along a first direction, the thickness of the first thin film layer is D, a first angle between the first direction and a direction along the thickness of stripe masks is θ1, θ1<tan−1(L/H); depositing a second thin film layer along a second direction, a second angle between the second direction and the direction along the thickness of stripe masks is θ2, θ2<tan−1[L/(H+D)], 0<L−H tan θ1−(H+D)tanθ2<10 nm, the first thin film layer partly overlaps with the second thin film layer to form an overlapping structure; etching the first thin film layer and the second thin film layer to obtain a nanoscale microstructure.