Nanostructure Fin Rounding for Uniform Dielectric Deposition
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Solution Overview
Problem
As semiconductor devices continue to reduce minimum feature sizes for increased integration density, issues arise with precursor deposition uniformity due to varying spacings between nanostructures, leading to non-uniform deposition thicknesses and loading differences in dense and non-dense regions.
Innovation Solution
A rounding process is employed to smooth the corners and edges of nanostructures, followed by conformal deposition of a dielectric layer, which reduces the impact of spacing variations and ensures more uniform deposition across different regions.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conformal deposition is performed on nanostructures with sharp corners, then deposition coverage is improved, but deposition uniformity deteriorates due to varying precursor access
Solution Approach 1:
The rounding process is performed as a preliminary step before conformal deposition to modify the nanostructure geometry. By pre-rounding the corners and edges, the deposition process subsequently achieves uniform thickness without requiring complex process adjustments, as the rounded geometry naturally facilitates uniform precursor distribution.
Solution Approach 2:
The invention applies curvature by rounding the sharp corners and edges of nanostructures. This spherical/curved geometry modification eliminates the geometric shadows and precursor access issues associated with sharp corners, enabling uniform conformal deposition across the entire nanostructure surface including corners and edges.
2Productivity
If minimum feature sizes are reduced for increased integration density, then integration density is improved, but deposition uniformity deteriorates due to varying spacings between nanostructures
Solution Approach 1:
The rounding process applies a localized geometric modification specifically to the corners and edges of nanostructures. This local quality change addresses the specific problem of non-uniform deposition at critical regions (corners and edges) while maintaining the overall high integration density achieved through reduced minimum feature sizes.
3Ease of manufacture
If sharp corners are maintained on nanostructures, then manufacturing simplicity is improved, but precursor access and deposition uniformity deteriorate
Solution Approach 1:
The rounding process is implemented as a preliminary fabrication step that creates optimized geometry for subsequent deposition. While this adds a process step, it enables simple conformal deposition processes to achieve uniform results, effectively trading a simple geometric feature for process simplicity overall.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The rounding process enhances precursor access and deposition uniformity, minimizing thickness and loading differences between dense and non-dense regions, thereby improving the manufacturing process efficiency and consistency.
Implementation Method 1
A rounding process is employed to smooth the corners and edges of nanostructures
Implementation Method 2
followed by conformal deposition of a dielectric layer, which reduces the impact of spacing variations and ensures more uniform deposition across different regions
Data Source
AI summary
Semiconductor devices and methods of manufacture are presented in which nanostructure devices are formed. In one presented embodiments a method comprises forming a multi-layer stack over a semiconductor substrate, patterning the multi-layer stack into a plurality of fins, the fins being located in a first region and a second region, the first region being a denser region than the second region, rounding corners of the plurality of fins, depositing a first dielectric between the fins, removing a portion of the first dielectric to form a first mask, and forming a gate structure over the first mask.