3D Nanostructure Gate Layout for Channel Width Control
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Solution Overview
Problem
The semiconductor industry faces challenges in fabricating high-density, high-performance semiconductor devices due to fabrication and design issues, particularly in three-dimensional designs, which require precise alignment and patterning of nanostructures.
Innovation Solution
A semiconductor device structure is developed with nanostructures wrapped by a gate structure, featuring insulating layers and source/drain structures to control the effective channel width, utilizing selective epitaxial growth and advanced patterning techniques to form fin structures and dielectric features, reducing the need for complex alignment processes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If three-dimensional designs are used to increase device density and performance, then device density and performance are improved, but fabrication complexity and alignment precision requirements increase
Solution Approach 1:
The device is divided into multiple semiconductor layers (first semiconductor layer, second semiconductor layer) stacked vertically to form three-dimensional structures. This segmentation enables increased device density by utilizing the vertical dimension while maintaining manageable fabrication processes for each individual layer.
Solution Approach 2:
The patent transitions from planar two-dimensional device layouts to three-dimensional vertical stacking of semiconductor layers. This dimensional change increases device density by exploiting the vertical space above the substrate, allowing multiple active regions to occupy a smaller footprint area.
2Reliability
If three-dimensional designs with stacked semiconductor layers are implemented, then device performance is improved, but alignment precision requirements worsen
Solution Approach 1:
The gate structure is formed to extend over the first and second semiconductor layers before the layers are fully patterned and defined. This preliminary formation of the gate structure serves as a reference for subsequent alignment steps, making it easier to align the semiconductor layers with each other and with the gate, thereby reducing overall alignment precision requirements.
Solution Approach 2:
The gate structure automatically serves as an alignment reference for the semiconductor layers. By forming the gate structure first and having it extend over the semiconductor layers, the structure itself provides the alignment cues needed for subsequent processing steps, eliminating the need for separate alignment marks or complex alignment procedures.
3Manufacturing precision
If insulating layers are added to control effective channel width, then channel control is improved, but device complexity increases
Solution Approach 1:
Insulating layers are selectively placed in specific regions where precise channel width control is needed, rather than uniformly throughout the entire device. This localized application of insulating materials provides the necessary channel control while minimizing the overall structural complexity and material usage.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This structure enables efficient fabrication of multi-gate devices with improved control over channel dimensions, reducing parasitic capacitance and leakage current, and enhancing device performance and density.
Implementation Method 1
utilizing selective epitaxial growth and advanced patterning techniques to form fin structures
Data Source
AI summary
A method for forming a semiconductor device structure is provided. The semiconductor device structure includes a plurality of first nanostructures stacked over a substrate in a vertical direction. The semiconductor device structure includes a first bottom layer formed adjacent to the first nanostructures, and a first insulating layer formed over the first bottom layer. The semiconductor device structure includes a first source/drain (S/D) structure formed over the first insulating layer, and the first insulating layer is in direct contact with one of the first nanostructures.