Nanostructure Gate Layout With Dielectric Walls Against Channel Shorting
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Solution Overview
Problem
As semiconductor devices continue to shrink in size, the integration density of electronic components increases, but this leads to challenges such as increased complexity in manufacturing and the need for more precise control of gate structures to prevent shorting of channel regions, which existing technologies have not adequately addressed.
Innovation Solution
The formation of dielectric walls between adjacent nanostructures and the use of π-shaped gate structures that control channel regions of multiple devices simultaneously, allowing for reduced gate contacts and improved device density.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If minimum feature size is reduced to increase integration density, then device integration density is improved, but manufacturing complexity increases and control precision requirements worsen
Solution Approach 1:
The gate structure is segmented into multiple gates (first gate, second gate, third gate) that can be independently formed and controlled. This segmentation allows each gate to be precisely fabricated using standard lithography processes, avoiding the need for single ultra-fine feature fabrication while achieving high integration density through multiple discrete gate elements
Solution Approach 2:
The invention transitions from planar gate structures to three-dimensional gate configurations where gates wrap around channel regions from multiple directions (top, bottom, and sidewalls). This dimensional transition enables better electrical control and higher device density without requiring proportional reduction in lithographic feature sizes
2Reliability
If gate structures are made more precise to prevent channel shorting, then device reliability is improved, but manufacturing complexity increases
Solution Approach 1:
Multiple gate structures (first gate over first channel, second gate over second channel, third gate coupling both channels) are merged into a single integrated gate assembly. This unified structure provides comprehensive channel control and prevents shorting between adjacent devices while being fabricated as one cohesive unit, reducing manufacturing steps compared to separate gate formations
Solution Approach 2:
The third gate structure serves multiple functions simultaneously: it couples the first and second channels electrically, provides isolation between adjacent device pairs, and contributes to overall channel control. This multi-functionality reduces the total number of discrete gate structures needed while maintaining reliable channel control
Data Source
AI summary
In an embodiment, a device includes: an isolation region on a substrate; first nanostructures above the isolation region; second nanostructures above the isolation region; a first gate spacer on the first nanostructures; a second gate spacer on the second nanostructures; a dielectric wall between the first gate spacer and the second gate spacer along a first direction in a top-down view, the dielectric wall disposed between the first nanostructures and the second nanostructures along a second direction in the top-down view, the first direction perpendicular to the second direction; and a gate structure around the first nanostructures and around the second nanostructures, a first portion of the gate structure filling a first area between the dielectric wall and the first nanostructures, a second portion of the gate structure filling a second area between the dielectric wall and the second nanostructures.