Nanostructure Gate Oxide Thickness Tuning Across Logic and I/O Regions
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Solution Overview
Problem
As semiconductor devices continue to shrink in size, challenges arise in integrating different electronic components with varying performance specifications, particularly in achieving different gate oxide thicknesses for logic and input/output device regions to manage leakage current and power consumption.
Innovation Solution
A method is disclosed for forming nanostructures with varying gate oxide thicknesses in different device regions by using a patterned hard mask to shield certain areas from oxidation, allowing for controlled thickness modulation in logic and I/O device regions.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If a uniform gate oxide thickness is used across all device regions, then the manufacturing process is simplified, but leakage current and power consumption cannot be optimized for different device types
Solution Approach 1:
The patent applies local quality by forming different gate oxide thicknesses in different device regions. Specifically, a first gate oxide thickness is formed in the logic device region while a second, different gate oxide thickness is formed in the I/O device region, allowing each region to be optimized for its specific functional requirements regarding leakage current and power consumption
Solution Approach 2:
The patent segments the semiconductor device into different device regions (logic device region and I/O device region) with distinct gate oxide thicknesses. This segmentation is achieved through region-specific oxidation processes that treat different areas differently, enabling independent optimization of each region's electrical characteristics
2Loss of energy
If different gate oxide thicknesses are formed in different device regions, then leakage current and power consumption are optimized, but the manufacturing process complexity increases
Solution Approach 1:
The patent employs preliminary action by forming a patterned hard mask layer before the oxidation process. This hard mask layer is selectively formed in certain device regions to control and protect areas where uniform gate oxide thickness is desired, thereby simplifying the overall manufacturing process by pre-defining the oxidation pattern rather than requiring complex post-oxidation processing
Solution Approach 2:
The patent uses a patterned hard mask layer as an intermediary element to mediate between the oxidation process and the final gate oxide structure. This intermediary layer enables selective oxidation in different device regions, allowing complex multi-thickness gate oxide structures to be formed through relatively simple process steps
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables the formation of semiconductor devices with tailored gate oxide thicknesses, enhancing performance by reducing leakage current and power consumption while facilitating easier integration of nanostructures.
Implementation Method 1
increasing a first thickness of the gate oxide around the second nanostructures by performing an oxidization process
Data Source
AI summary
A method of forming a semiconductor device includes: forming, in a first device region of the semiconductor device, first nanostructures over a first fin that protrudes above a substrate; forming, in a second device region of the semiconductor device, second nanostructures over a second fin that protrudes above the substrate, where the first and the second nanostructures include a semiconductor material and extend parallel to an upper surface of the substrate; forming a dielectric material around the first and the second nanostructures; forming a first hard mask layer in the first device region around the first nanostructures and in the second device region around the second nanostructures; removing the first hard mask layer from the second device region after forming the first hard mask layer; and after removing the first hard mask layer, increasing a first thickness of the dielectric material around the second nanostructures by performing an oxidization process.