Nanostructure Gate Spacer Layout for Lower Parasitic Capacitance
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Solution Overview
Problem
As semiconductor devices continue to reduce minimum feature sizes for increased integration density, issues such as parasitic capacitance between source/drain regions and gate structures become significant, affecting performance and reliability.
Innovation Solution
Incorporation of protective layers formed by a chemical reaction between sacrificial layers and plasma, which create inner spacers and provide electrical insulation between source/drain regions and gate structures, reducing parasitic capacitance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If minimum feature sizes are reduced to increase integration density, then more components can be integrated into a given area, but parasitic capacitance between source/drain regions and gate structures increases
Solution Approach 1:
The patent introduces protective layers as intermediary structures between the source/drain regions and gate structures. These protective layers act as mediators that provide electrical insulation and reduce parasitic capacitance coupling between adjacent components, thereby resolving the harmful effect of reduced feature sizes while maintaining high integration density.
Solution Approach 2:
The patent extracts the problematic direct electrical coupling between source/drain regions and gate structures by removing the conductive path and replacing it with insulating protective layers. This separation eliminates the parasitic capacitance issue while preserving the functional connectivity needed for device operation.
2Reliability
If protective layers are added to reduce parasitic capacitance, then electrical insulation between source/drain regions and gate structures improves, but device structure becomes more complex
Solution Approach 1:
The protective layers serve multiple functions simultaneously: they provide electrical insulation to reduce parasitic capacitance, protect underlying structures during fabrication processes, and define precise feature boundaries. This multi-functionality reduces the need for separate dedicated structures for each function, thereby limiting the increase in overall device complexity.
Solution Approach 2:
The patent combines the protective function with the insulating function into a single integrated layer structure. Rather than adding separate protective and insulating layers, the design merges these functions into unified protective layers that accomplish both goals, thereby minimizing structural complexity while achieving the desired electrical insulation.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Improves the performance and reliability of semiconductor devices by minimizing parasitic capacitance and enhancing electrical insulation.
Implementation Method 1
protective layers formed by a chemical reaction between sacrificial layers and plasma
Implementation Method 2
protective layers formed by a chemical reaction between sacrificial layers and plasma
Data Source
AI summary
A semiconductor device and the method of forming the same are provided. The semiconductor device may include a first nanostructure and a second nanostructure, a gate structure between the first nanostructure and the second nanostructure, a first dielectric layer on a sidewall of the gate structure, and a second dielectric layer on the first dielectric layer. The first dielectric layer may include a first material and the second dielectric layer may include a second material different from the first material. The second dielectric layer may be in contact with the first nanostructure and the second nanostructure.