Nanostructure Isolation Structure for Precise Etch Protection
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Solution Overview
Problem
As semiconductor devices continue to integrate more components into a given area through reduced minimum feature sizes, challenges arise in etching processes that can damage channel regions and isolation structures, leading to manufacturing defects and reduced device performance.
Innovation Solution
The use of oxide dummy regions between channel regions and the application of a hard mask to protect isolation regions during etching, combined with selective etches to minimize damage, allows for more precise etching and improved device integrity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If minimum feature sizes are reduced to increase integration density, then more components can be integrated into a given area, but etching processes become more difficult and may damage channel regions and isolation structures
Solution Approach 1:
The patent applies preliminary action by forming a protective hard mask layer over the isolation structures before performing the etching process. This pre-protection measure prevents etch damage to the isolation structures and channel regions during subsequent etching steps, enabling precise patterning at reduced feature sizes without compromising structural integrity.
Solution Approach 2:
The patent introduces a hard mask layer as an intermediary protective element between the etching process and the isolation structures. This intermediate layer acts as a buffer that absorbs or deflects etch attacks, preventing direct contact between the etchant and the vulnerable isolation structures, thereby maintaining manufacturing precision at smaller feature sizes.
2Ease of manufacture
If etching processes are performed to pattern nanostructures, then circuit components can be formed, but channel regions and isolation structures may suffer etch damage leading to manufacturing defects
Solution Approach 1:
The patent implements preliminary action by depositing a protective hard mask layer over the isolation structures and channel regions before the etching process. This pre-established protection enables aggressive etching for precise patterning while preventing etch damage that would compromise device integrity and create manufacturing defects.
Solution Approach 2:
The patent converts the potentially harmful etching process into a beneficial patterning tool by introducing protective hard mask layers. The hard masks absorb the harmful effects of the etchant, allowing the etching process to proceed aggressively for precise patterning while the protected regions remain intact, thus transforming a harmful process into a beneficial one.
3Manufacturing precision
If aggressive etching is used to achieve precise patterning at reduced feature sizes, then manufacturing precision improves, but damage to channel and source/drain regions increases
Solution Approach 1:
The patent introduces protective hard mask layers as intermediary elements between the aggressive etching process and the vulnerable semiconductor structures. These intermediate layers absorb or deflect the harmful etch attacks, enabling precise patterning through aggressive etching while preventing damage to channel and source/drain regions.
Solution Approach 2:
The patent converts the harmful aggressive etching process into a beneficial precision patterning tool by introducing protective hard mask layers. The hard masks absorb the harmful effects, allowing the etching to proceed aggressively for precise feature definition while the protected regions remain undamaged, thus transforming harm into benefit.
Data Source
AI summary
A method includes forming a fin over a substrate; forming a first isolation region over the substrate; forming a hard mask over the first isolation region, wherein the fin protrudes from the hard mask; forming dummy nanostructures over the fin; removing the dummy nanostructures; removing a portion of the fin to form an opening extending through the hard mask and the first isolation region; forming a second isolation region over the hard mask and in the opening; and forming a gate structure along a sidewall of the second isolation region.