Nanostructure LED with Region-Specific Aspect Ratios
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Solution Overview
Problem
Nanostructure semiconductor light emitting devices are prone to breakage during manufacturing, leading to increased leakage current and operating voltage due to their long, high-aspect-ratio nanorods, which can be fragile and easily damaged.
Innovation Solution
The design incorporates light emitting nanostructures with varying shapes and dimensions in different regions, including larger diameters, shorter lengths, and lower aspect ratios in specific regions to enhance resistance to external impact, along with an insulating protective layer to prevent damage, and a second electrode configuration that reduces the risk of separation and increases contact area.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If long nanorods with high aspect ratio are used to increase light emitting area, then luminous efficiency is improved, but the nanostructures become easily broken during manufacturing
Solution Approach 1:
The patent applies local quality by creating different nanostructure configurations in different regions of the device. Specifically, the light emitting nanostructures in the second region (peripheral region) have different dimensions than those in the first region (central region), optimizing each region's nanostructures for their specific functional requirements while improving overall manufacturing reliability
Solution Approach 2:
The patent changes the physical parameters of the nanostructures by varying their diameter and length across different regions. The light emitting nanostructures in the peripheral region have different aspect ratios compared to the central region, which reduces their fragility during manufacturing while maintaining light emitting efficiency
2Productivity
If nanostructures are made longer to increase light emitting area, then luminous efficiency is enhanced, but leakage current increases due to breakage
Solution Approach 1:
The patent addresses leakage current by implementing local quality variations in the nanostructure design. The peripheral region nanostructures have optimized dimensions that prevent breakage and associated leakage current, while the central region maintains high-aspect-ratio nanostructures for maximum light emission
Solution Approach 2:
The patent applies preliminary action by designing the nanostructure geometry before manufacturing to prevent breakage. The optimized diameter and length of peripheral nanostructures are predetermined to withstand manufacturing processes, preventing the breakage that would otherwise generate leakage current
3Productivity
If high aspect ratio nanorods are used to maximize light emitting area, then luminous efficiency is improved, but operating voltage increases due to nanostructure breakage
Solution Approach 1:
The patent reduces operating voltage by applying local quality to different device regions. The peripheral region contains nanostructures with optimized dimensions that prevent breakage, eliminating the voltage increase associated with defective nanostructures, while the central region maintains high-aspect-ratio structures for light emission
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach reduces the likelihood of nanostructure breakage, minimizes leakage current, and stabilizes operating characteristics by increasing the resistance of nanostructures to external impacts and optimizing electrode formation, thereby maintaining efficient light emission and reducing operating voltage.
Implementation Method 1
A semiconductor light emitting device such as a light emitting diode (LED) is a device including a material that emits light, in which energy generated through electron-hole recombination is converted into light to be emitted therefrom
Data Source
AI summary
A nanostructure semiconductor light emitting device may include a base layer having first and second regions and formed of a first conductivity-type semiconductor material; a plurality of light emitting nanostructures disposed on the base layer, each of which including a nanocore formed of a first conductivity-type semiconductor material, and an active layer and a second conductivity-type semiconductor layer sequentially disposed on the nanocore; a contact electrode disposed on the light emitting nanostructures to be connected to the second conductivity-type semiconductor layer; a first electrode connected to the base layer; and a second electrode covering a portion of the contact electrode disposed on at least one of light emitting nanostructures disposed in the second region among the plurality of light emitting nanostructures, wherein light emitting nanostructures disposed in the second region and light emitting nanostructures disposed in the first region among the plurality of light emitting nanostructures have different shapes.