Nanostructure LED Leakage Current Suppression via Polycrystalline Layer
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Solution Overview
Problem
Nanostructure semiconductor light emitting devices face issues with leakage current and wavelength conversion, which affect luminous efficiency and light emission characteristics.
Innovation Solution
The device incorporates a polycrystalline current suppressing layer and a current blocking intermediate layer, along with a specific structure of light emitting nanostructures, including a first conductivity-type semiconductor nanocore, an active layer, and a second conductivity-type semiconductor layer, to reduce leakage current and enhance wavelength control.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If light emitting nanostructures are used to increase luminous efficiency, then light emitting area increases, but leakage current occurs
Solution Approach 1:
A current blocking intermediate layer is introduced between the nanocore and the active layer to block leakage current. This intermediary layer selectively prevents harmful current flow while maintaining the light emitting function of the nanostructure, resolving the contradiction between increased luminous efficiency and leakage current reduction.
Solution Approach 2:
The harmful leakage current path is extracted and blocked by removing or blocking the direct electrical connection between certain layers. The current blocking intermediate layer effectively extracts the leakage current issue from the system by preventing it at the source interface between nanocore and active layer.
2Area of stationary object
If nanostructure semiconductor light emitting device is used, then light emitting area increases, but wavelength conversion problems occur
Solution Approach 1:
Different layers are assigned different material compositions and properties to optimize local functions. The active layer uses specific alloy compositions (InGaN, AlInGaN) with controlled indium and aluminum content to achieve precise wavelength control, while other layers have optimized compositions for their specific functions, allowing the large area nanostructure to maintain reliable wavelength conversion.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively reduces leakage current and improves luminous efficiency by blocking unwanted current flows and allowing precise wavelength design, resulting in enhanced light emission performance.
Implementation Method 1
A light emitting diode (LED) is a semiconductor light emitting device including a material that emits light when electrical energy is applied thereto. Energy generated through electron-hole recombination in semiconductor junction parts is converted into light that is to be emitted therefrom.
Implementation Method 2
a polycrystalline current suppressing layer disposed on the mask layer... to reduce leakage current and enhance wavelength control
Data Source
AI summary
A nanostructure semiconductor light emitting device may include a first conductivity-type semiconductor base layer, a mask layer disposed on the base layer and having a plurality of openings exposing portions of the base layer, a plurality of light emitting nanostructures disposed in the plurality of openings, and a polycrystalline current suppressing layer disposed on the mask layer. At least a portion of the polycrystalline current suppressing layer is disposed below the second conductivity-type semiconductor layer. Each light emitting nanostructure includes a first conductivity-type semiconductor nanocore, an active layer, and a second conductivity-type semiconductor layer.