Nanostructure LED with Uniform Crystal Planes
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Solution Overview
Problem
Semiconductor light emitting devices with nanostructures face challenges in maintaining stable luminous efficiency due to variations in crystal planes, which affect luminescence properties and wavelength consistency.
Innovation Solution
A nanostructure semiconductor light emitting device is designed with a base layer and insulating layer, featuring nanocores with side surfaces of the same crystal planes and an active layer only on these surfaces, along with a passivation layer to prevent electrical exposure, and a method for manufacturing this device involving growth of nanocores and subsequent layers to ensure uniform crystal plane alignment.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Area of stationary object
If nanocores with different crystal planes are used, then light emitting area is increased, but luminescence properties and wavelength consistency deteriorate
Solution Approach 1:
The patent applies local quality by configuring nanocores with specific crystal plane orientations in different regions. The nanocores are designed to have side surfaces with the same crystal plane (e.g., m-plane) while maintaining different orientations in space, allowing each region to contribute to light emission with consistent luminescence properties across the entire array.
2Manufacturing precision
If nanocores with same crystal planes are used, then wavelength consistency is improved, but light emitting area is reduced
Solution Approach 1:
The patent resolves this contradiction by transitioning from a two-dimensional planar arrangement to a three-dimensional nanostructure array. Multiple nanocores are vertically disposed on the base layer, each contributing to the light emitting area while maintaining consistent side surface crystal planes. This dimensional transition allows increased emitting area without compromising wavelength consistency.
3Area of stationary object
If active layer is disposed on all surfaces of nanocores, then light emitting area is increased, but droop characteristics deteriorate
Solution Approach 1:
The patent applies local quality by selectively positioning the active layer only on the side surfaces of the nanocores rather than on all surfaces. This localized configuration ensures that the active layer benefits from the non-polar or anti-polar crystal planes of the side surfaces, which improve droop characteristics, while still maintaining a large light emitting area through the array of nanocores.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enhances luminous efficiency and prevents luminescence property degradation by ensuring consistent wavelength emission across the device, improving droop characteristics and overall light emission.
Implementation Method 1
A semiconductor light emitting device such as a light emitting diode (LED), a device including materials emitting light, may convert energy generated through the recombination of electrons and electron holes in a junction semiconductor into light to be emitted therefrom
Implementation Method 2
a plurality of nanocores are grown on selective portions of a base layer including a first conductivity type semiconductor, using a first conductivity type semiconductor
Data Source
AI summary
A nanostructure semiconductor light emitting device includes a base layer, an insulating layer, and a plurality of light emitting nanostructures. The base layer includes a first conductivity type semiconductor. The insulating layer is disposed on the base layer and has a plurality of openings through which regions of the base layer are exposed. The light emitting nanostructures are respectively disposed on the exposed regions of the base layer and include a plurality of nanocores having a first conductivity type semiconductor and having side surfaces provided as the same crystal planes. The light emitting nanostructures include an active layer and a second conductivity type semiconductor layer sequentially disposed on surfaces of the nanocores. Upper surfaces of the nanocores are provided as portions of upper surfaces of the light emitting nanostructures, and the upper surfaces of the light emitting nanostructures are substantially planar with each other.