Nanostructure LED Wavelength Uniformity via Local Quality
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Solution Overview
Problem
Current semiconductor light emitting devices with nanostructures face challenges in achieving uniform light emission across different regions due to variations in nanocore diameters and growth rates, leading to inconsistent wavelengths and reduced light extraction efficiency.
Innovation Solution
The nanostructure semiconductor light emitting device incorporates a substrate with distinct light emitting and non-light emitting regions, where the interval between light emitting nanostructures in the first region is adjusted relative to the second region, and the non-light emitting region includes electrodes and a mesa region, to control nanocore growth rates and diameter distribution, ensuring uniform wavelength emission.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Loss of energy
If the interval between light emitting nanostructures is made smaller to increase light extraction efficiency, then light extraction efficiency is improved, but diameter distribution differences among nanostructures increase leading to non-uniform wavelength emission
Solution Approach 1:
The patent applies local quality by dividing the light emitting region into multiple regions (first region closer to non-light emitting region, second region farther away) with different nanostructure intervals. The first region has a smaller interval to enhance light extraction efficiency, while the second region has a larger interval to maintain wavelength uniformity. This spatial variation in interval size allows each region to optimize for its specific function, resolving the contradiction between light extraction efficiency and wavelength uniformity.
2Area of stationary object
If the nanostructures are densely packed to increase surface area and light emission, then light emitting region is increased, but diameter distribution control becomes difficult leading to inconsistent growth rates
Solution Approach 1:
The patent implements local quality by creating different density zones within the light emitting region. The first region contains densely packed nanostructures with smaller intervals to maximize surface area and light emission, while the second region contains sparsely packed nanostructures with larger intervals to ensure uniform diameter control and consistent growth rates. This regional differentiation allows the system to achieve both high overall emission area and local diameter uniformity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enhances light extraction efficiency by reducing diameter distribution differences among nanostructures, allowing for consistent and desired wavelength generation across the light emitting region, effectively producing white light through the combination of different wavelength bands.
Implementation Method 1
A semiconductor light emitting device such as a light emitting diode (LED) has a light emitting material, and may convert energy resulting from the combination of electrons and holes into light to be emitted therefrom
Implementation Method 2
semiconductor light emitting devices using nanostructures and their manufacturing technologies have been suggested in order to increase light extraction efficiency through improvements in crystallinity and through an increased light emitting region
Data Source
AI summary
A nanostructure semiconductor light emitting device may include a substrate including a plurality of light emitting nanostructures comprising nanocores including a first conductivity type semiconductor, active layers and second conductivity type semiconductor layers sequentially formed on the nanocores. The light emitting region may include a first region and a second region. The interval between the light emitting nanostructures disposed in the first region may be different than the interval between the light emitting nanostructures disposed in the second region. The first region may be closer to a non-light emitting region than the second region and may have a smaller interval between the light emitting nanostructures than that of the second region. Systems implementing such a nanostructure semiconductor light emitting device and methods of manufacture are also disclosed.