Integrated Nanostructure Light Emitter With Transistor Current Control
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Existing semiconductor light emitting elements lack a switching element for controlling current flow, leading to potential dislocations due to lattice constant differences and inefficient light emission control.
Innovation Solution
A light emitting device with integrated transistors and light emitting units on a single substrate, featuring nanostructures for controlled light propagation and current injection, along with insulating layers to suppress leakage and reduce dislocations.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Power
If a semiconductor light emitting element with nanostructures is used, then high-power light emission at narrow radiation angles is achieved, but dislocation may occur due to lattice constant difference between base and semiconductor layer
Solution Approach 1:
The semiconductor layer is divided into multiple thin layers (first semiconductor layer, light emitting layer, second semiconductor layer) with each layer having controlled thickness. This segmentation reduces the cumulative lattice mismatch effect and minimizes dislocation propagation while maintaining high-power light emission capability.
Solution Approach 2:
The thickness parameters of the semiconductor layers are precisely controlled (first semiconductor layer: 1-100 nm, second semiconductor layer: 1-100 nm) to optimize the balance between light emission efficiency and dislocation reduction. By adjusting these dimensional parameters, the patent achieves high-power emission while suppressing lattice mismatch effects.
2Device complexity
If no switching element is provided, then the structure is simpler, but current flow control and light emission control are inefficient
Solution Approach 1:
The switching element (transistor) and light emitting element are integrated into a single device structure on the same base. This merging enables efficient current control while maintaining compactness, and the transistor's source/drain regions are formed in the first semiconductor layer to achieve seamless integration.
Solution Approach 2:
The first semiconductor layer serves multiple functions: it acts as part of the light emitting structure, provides the medium for forming transistor source/drain regions, and enables both light emission and switching control functions within a single integrated device.
3Ease of manufacture
If transistor and light emitting unit are provided on separate substrates, then each component can be optimized independently, but device size is larger
Solution Approach 1:
Both the transistor and light emitting unit are formed on the same base substrate, integrating multiple functions into a single device. This reduces the overall device volume while maintaining the ability to optimize each component's performance through precise control of layer thicknesses and material compositions.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables precise control of light emission and current flow, reduces dislocations, and allows for downsized and efficient light emitting devices with improved laser oscillation and reduced leakage.
Implementation Method 1
the light propagation layer has a lower refractive index than the light emitting layer, so that the light generated in the light emitting layer propagates in the in-plane direction of the base, is gained in the light emitting layer, and laser-oscillates
Implementation Method 2
semiconductor lasers using nanostructures (nanocolumns) are expected to realize high-power light emission at narrow radiation angles due to the effect of photonic crystal by the nanostructures
Data Source
Figure 1
Figure 2
Figure 3
AI summary
To provide a light emitting device including a switching element. The light emitting device includes a light emitting unit having a plurality of nanostructures that can emit lights with injection of currents, and a transistor provided in correspondence with the light emitting unit and controlling amounts of the currents injected in the nanostructures.