Nanostructure Gate Layout Using Oxide Dummies for Etch Isolation
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Solution Overview
Problem
As semiconductor devices continue to reduce minimum feature sizes for increased integration density, challenges arise in etch processes that can damage channel and source/drain regions, affecting device performance and yield.
Innovation Solution
The use of oxide dummy regions between channel regions allows for more selective etches, reducing the risk of etch damage and enabling safer formation of isolation regions, which improves device density and yield.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If conventional etch processes are used to improve manufacturing efficiency, then productivity increases, but etch damage to channel and source/drain regions occurs, worsening device reliability
Solution Approach 1:
Oxide dummy regions are introduced as intermediary protective structures between channel regions during etch processes. These dummy regions act as sacrificial elements that absorb etch damage and provide a buffer zone, allowing more aggressive etching conditions to be used without harming the actual channel and source/drain regions, thus resolving the contradiction between manufacturing efficiency and device reliability
2Quantity of substance
If minimum feature sizes are reduced to increase integration density, then the quantity of components increases, but etch process control becomes more difficult, worsening manufacturing precision
Solution Approach 1:
Oxide dummy regions are strategically placed in specific locations between channel regions where etch damage is most likely to occur. This localized approach provides enhanced protection precisely where needed without affecting the overall miniaturization strategy, allowing continued reduction of minimum feature sizes while maintaining etch process control and manufacturing precision
Data Source
AI summary
A method includes forming a fin structure over a substrate; forming first nanostructures and second nanostructures over the fin structure, wherein the first nanostructures are continuous with respective second nanostructures; forming first dielectric dummy regions between ones of the first nanostructures, and second dielectric dummy regions between ones of the second nanostructures; forming first source/drain regions adjacent the first nanostructures and second source/drain regions adjacent the second nanostructures; performing an etching process to remove the first dielectric dummy regions and the second dielectric dummy regions; depositing gate structure layers on the first nanostructures and the second nanostructures; and forming an isolation region between the first nanostructures and the second nanostructures, wherein the isolation region physically separates the first nanostructures from the second nanostructures.