Nanostructure Transistor Bottom Isolation for Leakage Control
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Solution Overview
Problem
Forming source and drain regions with desired characteristics in nanostructure transistors is challenging, leading to leakage currents and increased power consumption and heat generation in integrated circuits.
Innovation Solution
Incorporating bottom dielectric regions between the source/drain regions and the semiconductor substrate to prevent leakage currents, while maintaining strain-induced conductivity for P-type transistors and reducing power consumption and heat generation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If source and drain regions are formed in nanostructure transistors, then transistor functionality is improved, but leakage currents increase and power consumption increases
Solution Approach 1:
A bottom dielectric region is introduced as an intermediary layer between the source/drain regions and the semiconductor substrate. This dielectric region acts as a mediator that blocks leakage current paths while allowing the source/drain regions to maintain their essential functionality in nanostructure transistors.
Solution Approach 2:
The harmful leakage current paths are extracted or removed from the system by introducing the bottom dielectric region, which selectively blocks the unwanted current flow between the source/drain regions and the substrate while preserving the desired transistor operation.
2Reliability
If source and drain regions are formed in nanostructure transistors, then transistor functionality is improved, but heat generation increases
Solution Approach 1:
The bottom dielectric region serves as a thermal intermediary that reduces heat generation by blocking leakage current paths, thereby decreasing the unwanted Joule heating that would otherwise occur in the source/drain to substrate junctions.
Solution Approach 2:
The invention converts the potentially harmful direct contact between source/drain regions and substrate (which causes heat generation) into a beneficial configuration by introducing the dielectric region, transforming the structure to eliminate both electrical leakage and associated thermal problems.
3Loss of energy
If bottom dielectric regions are added to eliminate leakage currents, then power consumption is reduced, but device complexity increases
Solution Approach 1:
The device structure is segmented by dividing the interface between source/drain regions and substrate into two distinct functional zones: the bottom dielectric region for blocking leakage currents and the source/drain regions for carrying signal currents. This segmentation enables selective control of different current paths.
Solution Approach 2:
The bottom dielectric region introduces local quality variation by providing different electrical properties (insulating) in the region where leakage blocking is needed, while maintaining conductive properties in the source/drain regions where current flow is desired. This localized differentiation achieves power reduction without excessive complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Substantially eliminates leakage currents, reducing power consumption and heat generation, thereby enhancing the efficiency and functionality of integrated circuits with nanostructure transistors.
Implementation Method 1
a bottom dielectric region in contact with a bottom of the source/drain region and separating the source/drain region from the semiconductor substrate
Implementation Method 2
maintaining strain-induced conductivity for P-type transistors
Data Source
AI summary
An integrated circuit includes a first nanostructure transistor and a second nanostructure transistor on a substrate. The source/drain regions of the first nanostructure are electrically isolated from the semiconductor substrate by bottom dielectric regions. The source/drain regions of the second nanostructure transistor in direct contact with the semiconductor substrate.