Nanostructure Transistor Gate Stack for Precise Threshold Control
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
The increasing complexity of semiconductor manufacturing processes due to scaling down in IC technology has necessitated improved methods for processing and manufacturing semiconductor devices.
Innovation Solution
The development of a semiconductor device structure involving a stack of semiconductor layers with alternating materials of different etch selectivity and oxidation rates, combined with advanced patterning and etching techniques to form nanostructure channels and gate electrodes, allowing for precise fabrication of nanostructure transistors.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If geometry size is decreased to increase functional density, then production efficiency is improved and costs are lowered, but processing complexity increases
Solution Approach 1:
The patent divides the semiconductor manufacturing process into multiple discrete stages including forming sacrificial structures, depositing semiconductor layers, patterning, and etching. Each stage is independently optimized and controlled, allowing complex nanoscale features to be created through a sequence of simpler, well-controlled steps rather than attempting to create them in a single process
Solution Approach 2:
The patent employs preliminary actions by first forming sacrificial gate structures and isolation regions before depositing the semiconductor layers. These preliminary structures serve as templates and guides for subsequent processing steps, enabling precise placement and formation of nanoscale channels and gates without requiring direct manipulation at the final dimensions
2Productivity
If functional density is increased by scaling down, then more devices fit per chip area, but manufacturing precision requirements become more stringent
Solution Approach 1:
The patent utilizes self-aligned processes where previously formed structures automatically serve as alignment references for subsequent steps. For example, the sacrificial gate structures and isolation regions are formed first, and all subsequent semiconductor layer depositions and patterning steps are self-aligned to these features, eliminating the need for separate alignment operations and ensuring high precision at nanoscale dimensions
Solution Approach 2:
The patent employs selective etching processes that exploit differences in material properties (etch selectivity) to remove specific layers while preserving others. By controlling etch parameters such as chemistry, temperature, and power, the process achieves high precision in defining nanoscale channel regions, gate structures, and isolation boundaries without affecting adjacent features
Data Source
AI summary
Embodiments of the present disclosure provide semiconductor device structures and methods of forming the same. The structure includes a first semiconductor layer disposed in a first region over a substrate, a gate dielectric layer disposed over the first semiconductor layer in the first region, one or more work function layers disposed on the gate dielectric layer in the first region, a gate electrode layer disposed on the one or more work function layers in the first region, and a second semiconductor layer disposed in a second region over the substrate. The gate dielectric layer is disposed over the second semiconductor layer in the second region, and the gate electrode layer is disposed on the gate dielectric layer in the second region.