Semiconducting Carbon Nanotube Ink Purity via Electrical Diode Testing

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Solution Overview

Problem

Current methods for purifying single-walled carbon nanotubes (SWCNTs) are inadequate, leading to the presence of metallic impurities and mixed chirality, which hampers their use in electronic devices, as existing spectroscopic techniques fail to accurately assess purity and result in unstable device performance.

Innovation Solution

Development of electronically pure semiconducting carbon nanotube inks with 99.9% or more semiconducting SWCNTs of specific chiralities, such as (6,5) SWCNTs, suspended in a liquid, free of metallic impurities, and used in metal/carbon nanotube network/metal double diodes to achieve nonlinear current-bias curves, ensuring high purity and stability.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Measurement precision

If optical spectroscopic screening techniques are used to purify SWCNTs, then purification process is simple, but purity assessment is inaccurate and device performance is unstable

Engineering Contradiction:
Improvepurity assessment accuracyVSAvoidpurification process complexity
Core Design Contradiction:
Measurement precisionVSDevice complexity

Solution Approach 1:

The patent replaces optical spectroscopic screening techniques with electrical measurement methods (current-bias curve analysis) to assess SWCNT purity. This substitution enables accurate detection of metallic impurities and verification of semiconducting behavior, achieving reliable purity assessment without relying on indirect optical signals that cannot distinguish between metallic and semiconducting nanotubes.

Inventive Principle:
Principle #28Mechanics substitution (Replace mechanical system)

Solution Approach 2:

The patent changes the measurement parameter from optical properties to electrical properties (current-bias characteristics). By measuring the nonlinear current-bias curve and analyzing Schottky barrier formation at metal-SWCNT contacts, the method transforms the purity assessment from an optical estimation to an electrical verification that directly reflects the semiconducting nature and purity of the nanotubes.

Inventive Principle:
Principle #35Parameter changes

2Ease of manufacture

If mixed chirality SWCNTs are used, then growth process is simpler, but device performance stability deteriorates

Engineering Contradiction:
Improvegrowth process simplicityVSAvoiddevice performance stability
Core Design Contradiction:
Ease of manufactureVSReliability

Solution Approach 1:

The patent extracts and isolates specific semiconducting chiralities (such as (6,5) SWCNTs) from the mixed chirality population through density gradient ultracentrifugation and other separation techniques. This extraction process removes metallic and undesired semiconducting nanotubes, leaving only the target chirality that provides stable and reproducible device performance while maintaining a relatively simple growth process.

Inventive Principle:
Principle #2Taking out (Extraction)

3Ease of manufacture

If bottom-gated SWCNT TFTs are used, then fabrication is easier, but device stability degrades over time

Engineering Contradiction:
Improvefabrication easeVSAvoiddevice stability
Core Design Contradiction:
Ease of manufactureVSDuration of action of stationary object

Solution Approach 1:

The patent inverts the gate configuration from bottom-gated to top-gated architecture. This inversion places the gate dielectric and gate electrode above the SWCNT channel instead of below, which eliminates direct contact between the gate stack and the nanotube channel. This structural inversion prevents dielectric degradation and interface contamination, thereby maintaining long-term device stability while preserving ease of fabrication through standard top-down processing techniques.

Inventive Principle:
Principle #13The other way round (Inversion)

Data Source

PatentUS11069867B2Electronically pure single chirality semiconducting single-walled carbon nanotube for large scale electronic devices
Publication Date: 2021.07.20 ATOM H2O LLC
  • US11069867B2 patent drawing
  • US11069867B2 patent drawing
  • US11069867B2 patent drawing

AI summary

An electronically pure carbon nanotube ink, includes a population of semiconducting carbon nanotubes suspended in a liquid, the ink being essentially free of metallic impurities and organic material, and characterized in that when incorporated as a carbon nanotube network in a metal/carbon nanotube network/metal double diode, a nonlinear current-bias curve is obtained on application of a potential from 0.01 V to 100 V. The ink can be used to prepare air-stable n-type thin film transistors having performances similar to current thin film transistors used in flat panel displays amorphous silicon devices and high performance p-type thin film transistors with high-κ dielectrics.