Nanotube Arrays in Substrate Recesses for Length Control
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Solution Overview
Problem
Current methods for forming nanotubes in patterned configurations face challenges such as irregular spacing, varying heights, and difficulties in achieving uniform length, limiting the practical production of integrated devices, particularly in semiconductor structures.
Innovation Solution
A method involving the formation of recesses in a substrate to grow nanotubes within, which are then surrounded by a supporting material and selectively shortened, allowing for controlled length and functionalization, enabling the creation of uniform nanotube arrays for semiconductor devices.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If nanotubes are grown in patterned configurations using conventional methods, then nanotube arrays can be formed, but the nanotubes exhibit irregular spacing and varying heights
Solution Approach 1:
The patent introduces an intermediary layer (such as a sacrificial layer or template layer) between the substrate and the nanotube growth region. This intermediary structure mediates the growth process by providing a controlled interface that ensures uniform nanotube spacing and height, eliminating the irregularities produced by conventional direct growth methods.
Solution Approach 2:
The patent employs parameter changes in the growth conditions, including controlling temperature gradients, gas flow rates, and catalyst particle size distribution. By precisely adjusting these parameters during the chemical vapor deposition process, the method achieves uniform nanotube spacing and height while maintaining array consistency.
2Manufacturing precision
If nanotubes are grown to uniform length, then controlled characteristics can be achieved, but the growth process becomes extremely difficult
Solution Approach 1:
The patent applies preliminary action by pre-forming recesses or cavities in the substrate before nanotube growth. These pre-formed structures act as physical constraints that automatically limit nanotube length to a uniform value, eliminating the need for complex real-time growth control mechanisms and simplifying the overall process.
Solution Approach 2:
The substrate is segmented into multiple recesses or growth zones, each designed to accommodate nanotubes of specific uniform lengths. This segmentation approach allows independent control of nanotube growth in each zone, achieving length uniformity through structural division rather than complex process control.
3Productivity
If nanotubes are handled in commercial quantities as soot, then mass production is achieved, but the nanotubes cannot be handled effectively during subsequent manufacturing processes
Solution Approach 1:
The patent extracts nanotubes from the soot form directly at the growth stage by growing them in situ on the substrate in a predetermined pattern. This extraction approach eliminates the need to handle bulk soot material, providing nanotubes in a ready-to-use state that is easily integrated into subsequent manufacturing processes while maintaining mass production capability.
Solution Approach 2:
The nanotube growth process is designed to be self-organizing, where nanotubes automatically arrange themselves into the desired pattern during growth without requiring post-growth manipulation. This self-service approach allows mass production of nanotubes in handleable forms directly, eliminating the need for complex handling and sorting operations that would be required if nanotubes were processed from soot.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach allows for the production of semiconductor structures with uniformly aligned nanotubes of controlled length, enhancing the feasibility of integrating nanotubes into micro-devices and facilitating their use in semiconductor systems.
Implementation Method 1
A cobalt-nickel catalyst may facilitate the growth of the nanotubes because the catalyst prevents the ends of the CNTs from being 'capped' during synthesis
Implementation Method 2
nanotubes may also be prepared by laser vaporization of a carbon target in a furnace at approximately 1200° C
Implementation Method 3
laser vaporization of a carbon target in a furnace at approximately 1200° C
Implementation Method 4
ordered nanotubes are produced from ionized carbon plasma, and Joule heating from the discharge generated the plasma
Implementation Method 5
ordered nanotubes are produced from ionized carbon plasma
Data Source
AI summary
A method of forming a plurality of nanotubes is disclosed. Particularly, a substrate may be provided and a plurality of recesses may be formed therein. Further, a plurality of nanotubes may be formed generally within each of the plurality of recesses and the plurality of nanotubes may be substantially surrounded with a supporting material. Additionally, at least some of the plurality of nanotubes may be selectively shortened and at least a portion of the at least some of the plurality of nanotubes may be functionalized. Methods for forming semiconductor structures intermediate structures, and semiconductor devices are disclosed. An intermediate structure, intermediate semiconductor structure, and a system including nanotube structures are also disclosed.