Nanotube Semiconductor Sensors With Side Electrodes for Shear Force
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Solution Overview
Problem
Existing pressure sensors using nanostructures are large in volume and can only measure vertical pressure, making it difficult to detect horizontal shear forces effectively.
Innovation Solution
A nanotube semiconductor device with vertically disposed nanotubes and electrodes on their sides, capable of sensing charge distribution changes due to shear forces, allowing for precise measurement of both direction and magnitude of shear forces through multiple electrodes arranged at various angles.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If multiple nanostructures are used to increase measurement sensitivity, then measurement precision is improved, but device volume increases
Solution Approach 1:
The patent transitions from measuring only vertical pressure (one dimension) to measuring shear force in horizontal directions (additional dimensions). By arranging electrodes on the side surfaces of vertically-oriented nanotubes, the device detects charge distribution changes caused by horizontal shear forces, enabling multi-directional measurement without increasing device volume.
2Measurement precision
If a vertical nanotube configuration is used to match shear force direction, then measurement alignment is improved, but the ability to measure horizontal shear forces deteriorates
Solution Approach 1:
The vertically-oriented nanotube structure with side-surface electrodes serves multiple functions: it maintains good alignment for vertical pressure measurement while simultaneously enabling horizontal shear force detection through the side electrodes. This multi-functional design allows a single device configuration to measure both vertical and horizontal force components.
3Adaptability or versatility
If electrodes are placed on side surfaces of nanotubes to detect shear force, then shear force measurement capability is improved, but device complexity increases
Solution Approach 1:
Instead of uniformly distributing electrodes or using complex multi-layer structures, the patent places electrodes selectively on specific side surfaces of the nanotube where they are most effective for detecting shear force components. This localized electrode placement optimizes the signal-to-noise ratio for shear force detection while minimizing the overall number of electrodes required.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The device enables precise, high-sensitivity measurement of shear forces with a compact size, suitable for applications in flexible and transparent devices, and can be used in tactile sensors, touch interfaces, robots, medical devices, and wearable technology.
Implementation Method 1
the pressure sensors using piezoelectric devices including a nanostructure such as nanorods or nanotubes have been developed
Data Source
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AI summary
The present disclosure relates to a vertical type semiconductor device and a shear force sensor including the same, wherein the semiconductor device comprises a substrate, a nanotube arranged on the substrate and at least one electrode which is in contact with a side surface of the nanotube. The semiconductor device provides a shear force sensor capable of calculating an applied shear force inversely by sensing a change in charge distribution in the nanotube curved or bent by the applied shear force.