Nanotwinned Metal Semiconductor Package for Low-Temperature Bonding
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Solution Overview
Problem
Current bonding techniques using nanotwinned metal lack specific applications in semiconductor manufacturing, particularly in improving Chip-to-Wafer and Wafer-to-Wafer bonding processes.
Innovation Solution
A semiconductor package structure and a byproduct of a semiconductor component are developed, which incorporate a nanotwinned metal layer between a lead frame and a semiconductor component, enhancing bonding efficiency through thermocompression bonding.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If conventional bonding techniques are used for Chip-to-Wafer and Wafer-to-Wafer bonding, then the bonding process can be completed, but the bonding temperature is high and bonding time is long
Solution Approach 1:
The patent applies parameter changes by modifying the metal layer structure to nanotwinned metal with specific crystallographic orientation (<100>) and controlled grain size (5-50 nm). This structural parameter change enables bonding at lower temperatures (reducing from conventional high temperature to optimized lower temperature ranges) and shorter times while maintaining bonding strength
Solution Approach 2:
The patent uses composite material approach by creating a nanotwinned metal layer that combines specific crystal structure characteristics with controlled grain size distribution. This composite microstructure provides both low-temperature bonding capability and strong mechanical bonding strength, resolving the contradiction between bonding temperature and bonding strength
2Productivity
If nanotwinned metal layer is introduced for bonding, then bonding temperature and time are reduced, but the application specificity is insufficient
Solution Approach 1:
The patent applies local quality by introducing a thickened metal layer specifically at the bonding interface region, while maintaining the nanotwinned structure in the bulk metal layer. This localized structural enhancement provides specific bonding functionality at the interface without requiring complete restructuring of the entire metal layer, thereby enabling specific applications with improved productivity
3Reliability
If traditional metal layers are used in bonding, then the structure is simple, but on-resistance is high and heat dissipation is poor
Solution Approach 1:
The patent changes the crystallographic orientation parameter of the metal layer to <100> and controls the grain size to 5-50 nm through nanotwinning. This parameter change reduces electrical resistance and improves electron transport, thereby enhancing on-resistance performance and heat dissipation without requiring complex multi-layer structures
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The use of nanotwinned metal layers improves the manufacturing of semiconductor package structures and components by increasing on-resistance, reducing heterogeneous bonding, and enhancing heat dissipation, thus addressing the lack of specific applications in existing bonding techniques.
Implementation Method 1
enhancing heat dissipation
Implementation Method 2
increasing on-resistance
Implementation Method 3
enhancing bonding efficiency through thermocompression bonding
Data Source
AI summary
A semiconductor package structure and a byproduct of a semiconductor component. The semiconductor package structure including a lead frame, a nanotwinned metal layer, a semiconductor component and a molding layer. The lead frame includes a supporting part and a circuit part. The nanotwinned metal layer is located on the supporting part. The semiconductor component is disposed on the nanotwinned metal layer. The nanotwinned metal layer is located between the supporting part and the semiconductor component. The semiconductor component is electrically connected to the circuit part. The molding layer covers the nanotwinned metal layer and the semiconductor component.