Nanowire AlN Buffer Substrate for Low-Defect Nitride Deposition
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Solution Overview
Problem
The challenge in the semiconductor industry is to produce high-quality substrates for group-III nitride-based electronic devices, particularly due to the difficulty in achieving low defect density in aluminum nitride buffer layers, which affects the performance of devices like deep UV light-emitting devices and high electron mobility transistors.
Innovation Solution
A substrate with a semiconductor wafer and an intermediate nanowire layer having a buffer layer of aluminum nitride integral to the tip portions of the nanowires, allowing for the deposition of electronic components with improved crystalline quality and reduced defect density.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional methods are used to produce aluminum nitride buffer layers on silicon substrates, then manufacturing cost is reduced, but defect density increases
Solution Approach 1:
The buffer layer structure is segmented into multiple functional layers including a silicon oxide layer, a first aluminum nitride layer with specific crystal orientation, and a second aluminum nitride layer. This segmentation allows each layer to address specific defect mechanisms, resulting in ultra-low defect density while maintaining manufacturability through standardized deposition processes
Solution Approach 2:
A silicon oxide intermediary layer is introduced between the silicon substrate and the aluminum nitride buffer layer. This intermediary layer serves as a transition interface that reduces thermal mismatch and prevents direct defect propagation, enabling high-quality buffer layers to be formed on conventional silicon substrates without requiring complex substrate modification
2Reliability
If high-quality aluminum nitride buffer layers are produced, then device performance is improved, but manufacturing cost increases
Solution Approach 1:
Specific deposition parameters are optimized including aluminum nitride layer thickness (50-200 nm), deposition temperature (700-900°C), and crystal orientation control. These parameter changes enable high-quality buffer layers to be formed using conventional semiconductor manufacturing equipment, achieving low defect density without proportionally increasing manufacturing cost
3Manufacturing precision
If the buffer layer quality is improved, then electronic component deposition quality is improved, but the complexity of the substrate structure increases
Solution Approach 1:
The buffer layer structure implements local quality by creating regions with different crystal orientations and thicknesses tailored to specific functional requirements. The first aluminum nitride layer provides stress management while the second layer provides low-defect surface for component deposition, with each region optimized for its specific purpose rather than uniform structure throughout
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables the fabrication of high-performance, compact, and cost-effective semiconductor devices by enhancing the quality of the aluminum nitride buffer layer, leading to improved device performance and reduced manufacturing costs.
Implementation Method 1
By exploiting the slow Al adatom migration in the nitrogen rich environment on a nanowire template, the coalescence process is promoted
Implementation Method 2
By exploiting the slow Al adatom migration in the nitrogen rich environment on a nanowire template, the coalescence process is promoted
Data Source
AI summary
There is described a substrate for a semiconductor device. The substrate generally has a semiconductor wafer; an intermediate nanowire layer having a plurality of nanowires each having in succession a base portion mounted to the semiconductor wafer, an elongated body portion extending away from the semiconductor wafer, and a tip portion; and a buffer layer of aluminum nitride being made integral to the tip portions of the plurality of nanowires.