Nanowire Transistor Anchor Pad Support for Sagging Prevention
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Solution Overview
Problem
Nanowire field effect transistors (FETs) experience mechanical sagging due to long unsupported spans, leading to structural integrity issues and potential short circuits in gate all-around structures.
Innovation Solution
The implementation of anchor pads along the span of nanowires to support them and prevent sagging, ensuring structural integrity by connecting source and drain regions with suspended nanowires and forming gate dielectric and gate metal around the nanowires.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Length of moving object
If long channel length nanowires are used in gate all-around structures, then the device channel length is increased, but mechanical sagging occurs leading to structural integrity degradation
Solution Approach 1:
The patent divides the long nanowire channel into multiple segments by introducing anchor pads at intermediate positions along the nanowire span. These anchor pads create shorter supported sections between anchors, preventing mechanical sagging while maintaining the overall long channel length for improved device performance
Solution Approach 2:
The patent introduces anchor pads as intermediary support structures between the source and drain regions. These anchor pads act as mediators that provide mechanical support to the nanowire, preventing sagging and maintaining structural integrity without interfering with the electrical function of the long channel
Data Source
AI summary
A nanowire device includes a first component formed on a substrate and a second component disposed apart from the first component on the substrate. A nanowire is configured to connect the first component to the second component. An anchor pad is formed along a span of the nanowire and configured to support the nanowire along the span to prevent sagging.