Nanowire Bending Prevention via Segmented Layer Etching
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Solution Overview
Problem
Conventional nanowires in semiconductor devices are susceptible to bending, which adversely affects the performance of the semiconductor device when used as a channel, leading to inadequate electrostatic control and charge transfer.
Innovation Solution
A semiconductor manufacturing method involving the formation of a multi-layer structure with ion implantation to create doped regions, followed by etching to form fin and support structures, where the second semiconductor layer hangs over the substrate, and the first semiconductor layer is removed using a dry etching process, with specific conditions for ion implantation and etching to reduce intrinsic stress and prevent bending.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If conventional nanowire is used as a channel in semiconductor device, then the device can be manufactured with simpler process, but the nanowire is susceptible to bending which adversely affects the performance
Solution Approach 1:
The nanowire structure is segmented into multiple layers (first semiconductor layer and second semiconductor layer) with different functionalities. The first layer provides mechanical support while the second layer forms the active channel, separating the structural and functional roles to prevent bending while maintaining manufacturability.
Solution Approach 2:
The patent uses composite material structure by combining different semiconductor materials in layers. The first semiconductor layer and second semiconductor layer have different material properties, where the first layer provides mechanical strength and the second layer provides electrical functionality, creating a composite structure that resists bending.
2Reliability
If multi-layer structure with doped regions is formed to prevent bending, then the nanowire stability is improved, but the device complexity increases
Solution Approach 1:
Ion implantation is applied locally to specific regions of the first semiconductor layer to create doped regions. This local modification provides targeted mechanical support and stress control where needed, rather than uniformly complicating the entire structure. The doped regions are formed in specific areas to prevent bending while keeping other areas simple.
Solution Approach 2:
The doped regions are formed in the first semiconductor layer before the final nanowire structure is completed. This preliminary doping action pre-establishes the mechanical support framework that will prevent bending in subsequent processing steps, simplifying the overall manufacturing sequence despite the added complexity.
3Reliability
If the first semiconductor layer is removed to form hanging nanowire, then the electrostatic control is improved, but the nanowire becomes more susceptible to bending
Solution Approach 1:
The nanowire is segmented into two functional layers where the first semiconductor layer serves as a sacrificial support structure that is selectively removed. This segmentation allows the second layer to form the active channel with excellent electrostatic control while the first layer's doped regions provide residual mechanical support to prevent bending.
Solution Approach 2:
The patent changes the material and doping parameters of the first semiconductor layer to create a structure that can be selectively removed. By controlling the doping concentration and material composition, the first layer becomes susceptible to selective etching while the second layer remains intact, achieving both electrostatic control and bending prevention.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method effectively reduces bending issues in nanowires, enhancing electrostatic control and charge transfer capabilities by forming a stable support structure that maintains the integrity of the nanowire channel, thereby improving the performance of semiconductor devices.
Implementation Method 1
an ion implantation process is conducted on a portion of the first semiconductor layer to form a doped region therein
Implementation Method 2
the first semiconductor layer in the fin structure is removed by a dry etching process
Data Source
AI summary
A semiconductor device and its manufacturing method are presented, relating to semiconductor techniques. The manufacturing method includes: forming a multi-layer structure comprising one or more semiconductor structures on a substrate. The semiconductor structure is formed by: forming a first semiconductor layer; and forming a second semiconductor layer on the first semiconductor layer, wherein in at least one semiconductor structure, an ion implantation is conducted on a portion of the first semiconductor layer to form a doped region therein; etching the multi-layer structure to form a fin structure and a support structure on at least one side of the fin structure, with the support structure comprising at least a portion of the doped region; and removing the first semiconductor layer in the fin structure so that the second semiconductor layer becomes hanging over the substrate. This inventive concept ameliorates the bending issue of the second semiconductor layer.