Nanowire Channel Semiconductor Device with Tilted Doping
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Solution Overview
Problem
Current semiconductor devices face challenges in efficiently forming channel regions with precise control over conductivity types and distances, which affects their electrical resistance and capacitance characteristics.
Innovation Solution
The semiconductor device is formed by creating a channel region between a first type region and a second type region using nanowires, with a gate region surrounding the channel, where the channel region is tiltedly doped and separated by a specific distance from the first type region, and a dielectric region with a high dielectric constant is used to optimize electrical properties.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If nanowires are used to form the channel region, then the control over conductivity types and distances is improved, but the device complexity increases
Solution Approach 1:
The channel region is segmented into multiple nanowires, each independently controllable for conductivity type and positioning. This segmentation allows precise control over electrical properties by adjusting individual nanowire characteristics while maintaining overall device functionality, achieving high manufacturing precision through modular nanoscale structures.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach results in a semiconductor device with low electrical resistance and capacitance, enhancing the device's performance by controlling the conductivity types and distances effectively.
Implementation Method 1
a dielectric region with a high dielectric constant is used to optimize electrical properties
Implementation Method 2
the channel region is tiltedly doped and separated by a specific distance from the first type region
Data Source
AI summary
A semiconductor device includes a first type region including a first conductivity type. The semiconductor device includes a second type region including a second conductivity type. The semiconductor device includes a channel region extending between the first type region and the second type region. The channel region is separated a first distance from a first portion of the first type region. The semiconductor device includes a gate region surrounding the channel region. A first portion of the gate region is separated a second distance from the first portion of the first type region. The second distance is greater than the first distance.