Nanowire Corner Rounding via Oxidizing Microwave Plasma
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Solution Overview
Problem
Semiconductor devices beyond the 14 nm technology node face challenges in maintaining device performance and short channel control due to the presence of substantially right angle corners in nanowires, leading to electric field concentration and potential performance degradation.
Innovation Solution
A method involving the use of oxidizing microwave plasma to form and remove surface layers on nanowires, repeatedly trimming and rounding their corners to achieve a desired height and shape, utilizing different gas pressures to control oxidation and etching processes effectively.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If nanowires with substantially right angle corners are used to scale device feature size, then device performance and transistor density are improved, but electric field concentration occurs leading to performance degradation
Solution Approach 1:
The patent applies corner rounding to nanowires by forming an oxidized surface layer and selectively removing material at the corners through etching processes. This transforms the sharp right angle corners into curved surfaces, eliminating electric field concentration while preserving the scaled dimensions and performance benefits of the nanowire structure.
Solution Approach 2:
The patent selectively modifies only the corner regions of nanowires through localized oxidation and etching processes, leaving the bulk nanowire structure intact. This local quality change addresses the electric field concentration issue at corners without affecting the overall device scaling and performance characteristics.
2Object-affected harmful factors
If corner rounding and trimming processes are applied to nanowires, then electric field concentration is reduced, but process complexity increases
Solution Approach 1:
The patent combines the corner rounding and trimming operations into an integrated process sequence where oxidation and etching steps are performed in a coordinated manner. This merging of operations achieves the desired corner modification while managing process complexity through systematic integration rather than separate discrete steps.
Solution Approach 2:
The patent controls the corner rounding and trimming by adjusting process parameters such as oxidation time, temperature, and etching conditions. By optimizing these parameters, the process achieves effective corner modification with controlled complexity, avoiding the need for overly complex process architectures.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This process effectively reduces electric field concentration at the corners of nanowires, enhancing device performance by ensuring precise control over corner rounding and trimming, thereby improving device speed and reliability.
Implementation Method 1
forming an oxidized surface layer on the plurality of nanowires using an oxidizing microwave plasma
Implementation Method 2
forming an oxidized surface layer on the plurality of nanowires using an oxidizing microwave plasma
Data Source
AI summary
Embodiments of the invention describe a method of corner rounding and trimming of nanowires used in semiconductor devices. According to one embodiment, the method includes providing in a process chamber a plurality of nanowires separated from each other by a void, where the plurality of nanowires have a height and at least substantially right angle corners, forming an oxidized surface layer on the plurality of nanowires using an oxidizing microwave plasma, removing the oxidized surface layer to trim the height and round the corners of the plurality of nanowires, and repeating the forming and removing at least once until the plurality of nanowires have a desired trimmed height and rounded corners.