Nanowire FET Radiation Sensor Design
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Existing radiation detection systems require multiple steps and strong internal amplification for accurate detection of high energy radiation, leading to complexity and loss of information.
Innovation Solution
A radiation sensor utilizing an array of nanowire field effect transistors (NWFETs) with a radiation-sensitive material, where the conductivity between the source and drain terminals changes in response to absorbed radiation, eliminating the need for secondary conversion steps and strong internal amplification.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If dual-step conversion (scintillation crystal + photodetector) is used for high energy photon detection, then detection capability is achieved, but device complexity increases and information loss occurs
Solution Approach 1:
The patent combines the scintillation crystal and photodetector into a single integrated device where the photodetector is formed directly on the scintillation crystal surface. This merging eliminates the need for separate components and interconnections, reducing device complexity while maintaining detection capability through direct optical coupling.
Solution Approach 2:
The patent creates a universal detector structure that can detect multiple types of radiation (gamma rays, x-rays, charged particles) using a single integrated device. The photodetector array can process signals from different radiation types simultaneously, eliminating the need for separate detection systems for each radiation type.
2Measurement precision
If strong internal amplification is used in semiconductor detectors (Germanium, CdTe, CZT), then accurate detection of high energy radiation is achieved, but device complexity and amplification requirements increase
Solution Approach 1:
The patent changes the material parameters by using organic scintillation materials with specific optical properties (high light yield, appropriate emission wavelength) that naturally provide signal amplification. This material parameter change enables accurate detection without requiring complex electronic amplification systems, as the optical signal generated is inherently strong enough for direct detection.
3Adaptability or versatility
If multiple conversion steps are used for radiation detection, then detection of different radiation types is achieved, but loss of information and complexity increase
Solution Approach 1:
The patent designs a universal photodetector array that can detect multiple radiation types (gamma rays, x-rays, charged particles) simultaneously using a single device. The photodetector's broad spectral response and the scintillation material's properties enable direct detection of different radiation types without sequential conversion steps, preserving signal information and reducing complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The NWFET-based sensor simplifies detector design, enhances sensitivity, and reduces amplification requirements, enabling efficient detection of various radiation types with improved spatial resolution and accuracy.
Implementation Method 1
charge generated upon absorption of radiation incident upon a radiation sensitive material induces an electrical response
Implementation Method 2
each NWFET is configured such that the conductivity between the source and drain changes in response to radiation absorbed in the layer of radiation sensitive material
Data Source
AI summary
A sensor comprises a substrate; an array of nanowire field effect transistors (NWFETs) formed in said substrate, each of the NWFETs having source, drain and gate terminals; a nanowire coupled between the source terminal and the drain terminal of each NWFET; and a layer of radiation sensitive material disposed over said NWFETs and said nanowires with each of the source, drain and gate terminals configured to be coupled to respective ones of first, second or third reference potentials, wherein each NWFET is configured such that the conductivity between the source and drain changes in response to radiation absorbed in the layer of radiation sensitive material such that the sensor generates an output signal in response to radiation absorbed by the radiation sensitive material.