Nanowire LED Fabrication via Flowable Material Planarization
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Solution Overview
Problem
The three-dimensional nature of nanowire LEDs poses challenges in fabrication, particularly in the wire bonding step due to the leverage from mechanical pressure, which can break the nanowires, and conventional dry etch methods result in isolated devices with reduced active regions and increased process steps.
Innovation Solution
A method involving the formation of an insulating layer on a nanowire array, followed by selective wet etching through a patterned mask to planarize the surface, defining a larger active region with fewer process steps and preventing nanowire breakage during bonding.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If conventional dry etch methods are used on nanowire structures, then the three-dimensional nanowire devices can be processed, but the devices become isolated with reduced active regions and require increased process steps
Solution Approach 1:
A flowable material layer is introduced as an intermediary substance between the nanowire structures. This material fills the spaces between nanowires and enables selective removal of specific nanowires while maintaining electrical connectivity through the remaining structures, thereby reducing device isolation and simplifying the fabrication process
2Adaptability or versatility
If wire bonding is performed on three-dimensional nanowire LEDs, then the unique properties of nanowires can be utilized, but mechanical pressure and leverage can break the nanowires
Solution Approach 1:
The flowable material layer is formed between the nanowires before the wire bonding process. This preliminary action provides mechanical support and stress distribution during subsequent bonding operations, preventing nanowire breakage while preserving the three-dimensional nanowire structure and its unique properties
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables the creation of nanowire devices with planarized bond pad areas and a larger active region, reducing the risk of nanowire breakage and simplifying the fabrication process, thereby enhancing the reliability and efficiency of nanowire LED devices.
Implementation Method 1
etching the second portion of the flowable material and the second portion of the plurality of nanostructures to remove the second portion of the flowable material and the second portion of the plurality of nanostructures
Data Source
AI summary
Various embodiments include methods of fabricating a semiconductor device that include providing a plurality of nanostructures extending away from a support, forming a flowable material layer between the nanostructures, forming a patterned mask over a first portion of the flowable material and the first portion of the plurality of nanostructures, such that a second portion of the flowable material and a second portion of the plurality of nanostructures are not located under the patterned mask and etching the second portion of the flowable material and the second portion of the plurality of nanostructures to remove the second portion of the flowable material and the second portion of the plurality of nanostructures to leave the first portion of the flowable material and the first portion of the plurality of nanostructures unetched.