Nanowire LED Cross-Section Homogenization for Wavelength Control
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Solution Overview
Problem
Existing optoelectronic devices with axial-type light-emitting diodes using three-dimensional semiconductor elements suffer from uncontrolled wavelength dispersion due to variations in the mean diameter of the semiconductor elements, leading to inconsistent radiation emission.
Innovation Solution
A method of manufacturing optoelectronic devices involving the formation of three-dimensional semiconductor elements with a lower portion and an upper portion, where the upper portion is formed by vapor deposition at a pressure lower than 1.33 mPa, allowing for precise control of the dimensions and reducing wavelength dispersion.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If metal-organic chemical vapor deposition (MOCVD) is used to form three-dimensional semiconductor elements, then the manufacturing process is simple and efficient, but the mean diameter of the semiconductor elements cannot be accurately controlled, leading to uncontrolled wavelength dispersion
Solution Approach 1:
The semiconductor element formation process is divided into two distinct stages: first, rapid growth of the lower portion by MOCVD to achieve high productivity; second, precise diameter control of the upper portion by molecular beam epitaxy (MBE) to achieve the required manufacturing precision. This segmentation allows each process to be optimized for its specific function without compromise.
Solution Approach 2:
The lower portion of the semiconductor element is formed in advance by MOCVD with optimized growth conditions, establishing a foundation that enables subsequent precise diameter control. The preliminary formation of this base structure allows the second stage to focus exclusively on achieving the required dimensional precision for wavelength control.
2Manufacturing precision
If the upper portion is formed by molecular beam epitaxy (MBE) at low pressure, then the mean diameter can be precisely controlled to reduce wavelength dispersion, but the manufacturing process becomes more complex
Solution Approach 1:
The manufacturing process is segmented into two specialized stages: MOCVD for the lower portion and MBE for the upper portion. Each stage uses the most appropriate technique for its specific requirements, with MBE providing precise diameter control for the upper portion while MOCVD handles the bulk material formation, thereby justifying the increased process complexity through superior precision outcomes.
Solution Approach 2:
The process transitions from high-pressure MOCVD conditions to low-pressure MBE conditions, changing physical parameters to achieve precise diameter control. This parameter change enables atomic-layer precision in depositing the upper portion, controlling the mean diameter to within narrow tolerances that directly reduce wavelength dispersion in the emitted radiation.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method effectively reduces wavelength dispersion of the radiations emitted by the light-emitting diodes, ensuring more consistent and controlled electromagnetic radiation output.
Implementation Method 1
The upper portions are formed by vapor deposition at a pressure lower than 1.33 mPa
Implementation Method 2
the lower portions are formed by selective etching or by epitaxial growth, preferably by a metal-organic chemical vapor deposition
Implementation Method 3
the lower portions are formed by selective etching or by epitaxial growth, preferably by a metal-organic chemical vapor deposition, or by molecular beam epitaxy
Data Source
AI summary
A method of manufacturing an optoelectronic device including-light-emitting diodes comprising the forming of three-dimensional semiconductor elements made of a III-V compound, each comprising a lower portion and an upper portion and, for each semiconductor element, the forming of an active area covering the top of the upper portion and the forming of at least one semiconductor area of the III-V compound covering the active area. The upper portions are formed by vapor deposition at a pressure lower than 1.33 mPa.