Nanowire Manufacturing Kit Grid Pattern Etching
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Current nanowire manufacturing methods, such as the Vapor-Liquid-Solid (VLS) growth method, face limitations in mass production due to high temperature requirements, cost, and difficulty in adjusting nanowire diameter and length, as well as impurity contamination.
Innovation Solution
A nanowire manufacturing kit that forms grid patterns on a substrate, deposits nanowire material, and uses wet-etching to produce nanowires at room temperature, allowing for adjustable width and height through controlled etching time, and enables mass production with a low-cost process by separating the nanowires using UV-sensitive adhesives or ultrasound.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If VLS growth method is used to manufacture nanowire, then nanowire can be formed with specific diameter control, but high temperature heat treatment is required and mass production is not proper
Solution Approach 1:
The patent replaces the thermal field (high temperature heat treatment) with a mechanical field (room temperature processing). The nanowire is formed by depositing material on grid patterns at room temperature, eliminating the need for high temperature heat treatment while maintaining diameter control precision.
Solution Approach 2:
The patent changes the processing temperature parameter from high temperature (500°C in VLS method) to room temperature. This parameter change enables mass production while maintaining nanowire diameter control, resolving the contradiction between manufacturing precision and productivity.
2Manufacturing precision
If VLS growth method is used to manufacture nanowire, then nanowire can be formed with metal catalyst, but precise width and distribution adjustment is difficult and impurity contamination occurs
Solution Approach 1:
The patent extracts and removes the metal catalyst from the nanowire structure. By forming nanowires on grid patterns without metal catalyst, the method eliminates impurity contamination from metal catalyst while enabling precise width control through the grid pattern geometry.
Solution Approach 2:
The patent introduces grid patterns as an intermediary structure between the substrate and nanowire. The grid patterns serve as a template that defines nanowire width and distribution, replacing the metal catalyst's nucleation function while enabling precise dimensional control and eliminating contamination.
3Length of moving object
If VLS growth method is used to manufacture nanowire, then nanowire growth can be controlled by material gas amount, but maximum length is limited and process cost is high
Solution Approach 1:
The patent replaces the complex VLS growth process (requiring material gas supply and high temperature control) with a simple deposition process at room temperature. This substitution reduces process cost while enabling nanowire length control through grid pattern design rather than material gas amount.
4Reliability
If VLS growth method is used to manufacture nanowire, then nanowire can be formed on metal catalyst, but high temperature heat treatment makes the process unsuitable for mass production
Solution Approach 1:
The patent changes the temperature parameter from high temperature to room temperature, making the process suitable for mass production while maintaining nanowire formation reliability through the grid pattern template approach.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables high-regularity nanowire production at room temperature and low cost, facilitating mass production while avoiding high-temperature heat treatment and impurity contamination, with adjustable nanowire dimensions and reduced manufacturing costs.
Implementation Method 1
a nanowire adhesive film for adhering the nanowire to the grid pattern
Implementation Method 2
an adhesion force of which is lost through UV, lighting UV to the adhesive agent to remove the adhesion force of the adhesive agent
Data Source
AI summary
Provided is a nanowire manufacturing substrate, comprising a grid base layer on a substrate and a grid pattern formed by patterning the grid base layer, the grid pattern being disposed to produce a nanowire on a surface thereof. According to the present invention, the width and height of the nanowire can be adjusted by controlling the wet-etching process time period, and the nanowire can be manufactured at a room temperature at low cost, the nanowire can be mass-manufactured and the nanowire with regularity can be manufactured even in case of mass production.