Nanowire Matrix Transistor Gate Structure
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Solution Overview
Problem
Modern integrated circuits face challenges in producing transistors that are smaller in size while maintaining high performance and meeting the demands of various applications, particularly in high-frequency RF applications, where RF linearity is a critical characteristic.
Innovation Solution
The development of a transistor device featuring a matrix of nanowires arranged in specific orientations with a gate structure and epitaxial semiconductor material in the source and drain regions, allowing for efficient current flow and improved performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Area of stationary object
If transistor size is reduced to increase integration density, then chip area utilization improves, but manufacturing precision and device performance deteriorate
Solution Approach 1:
The patent transitions from planar 2D transistor structures to three-dimensional nanowire configurations arranged in matrices (e.g., 2x2, 3x3, or more dense arrangements). This dimensional change allows multiple active channels to occupy a smaller footprint area while maintaining sufficient manufacturing tolerances, as each nanowire acts as an independent conduction path surrounded by its own gate structure.
Solution Approach 2:
The transistor channel is segmented into multiple discrete nanowires rather than a continuous planar layer. Each nanowire functions as an independent current channel with its own gate control, allowing the overall device to achieve higher effective width and performance within a reduced footprint while each individual nanowire maintains manufacturable dimensions and precision requirements.
2Length of moving object
If transistor size is reduced to meet application demands, then device miniaturization improves, but RF linearity deteriorates
Solution Approach 1:
Multiple nanowire channels are merged into a single transistor device with shared source, drain, and gate structures. The combined current flow through multiple parallel nanowire channels maintains higher linearity characteristics than a single miniaturized channel would provide, as the parallel configuration reduces current density and nonlinear effects in each individual channel while maintaining compact overall device dimensions.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This design enhances the performance and RF linearity of transistors, enabling them to meet the demands of smaller size and higher frequency applications effectively.
Implementation Method 1
a gate structure that is positioned around the outer perimeter of all of the nanowire structures in the matrix
Implementation Method 2
regions of epitaxial semiconductor material positioned in the source and drain regions of the transistor device, wherein the regions of epitaxial semiconductor material conductively contact the plurality of nanowire structures
Data Source
AI summary
One illustrative transistor device disclosed herein includes a nanowire matrix comprising a plurality of nanowire structures that are arranged in at least one substantially horizontally oriented row and at least two substantially vertically oriented columns, the at least two substantially vertically oriented columns being laterally spaced apart from one another in a gate width direction of the transistor device, each of the plurality of nanowire structures comprising an outer perimeter. This illustrative embodiment of the transistor device further includes a gate structure that is positioned around the outer perimeter of all of the nanowire structures in the matrix, and a gate cap positioned above the gate structure.