Nanowire Nanosheet Device Support Portion Adhesion Prevention
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Solution Overview
Problem
The miniaturization of nanowire/nanosheet devices, such as Gate-All-Around (GAA) MOSFETs, faces challenges in preventing the adhesion of nanowires/nanosheets during the manufacturing process, especially when the gate length exceeds 100 nm.
Innovation Solution
A nanowire/nanosheet device with a support portion is introduced, where the support portion penetrates the nanowire/nanosheet perpendicularly to the substrate, and a gate stack surrounds the nanowire/nanosheet, formed through a method involving the alternation of gate and nanowire/nanosheet defining layers, patterning, and replacement of a dummy gate with a gate stack, to prevent collapse and adhesion.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Length of moving object
If nanowire/nanosheet devices are miniaturized to achieve further device scaling, then device size is reduced and integration density is improved, but nanowires/nanosheets tend to adhere to each other during manufacturing
Solution Approach 1:
A support portion is introduced as an intermediary structure that penetrates through the nanowire/nanosheet. This support portion acts as a spacer to maintain the distance between adjacent nanowires/nanosheets, preventing them from adhering to each other during the manufacturing process while allowing the devices to be miniaturized.
2Ease of manufacture
If gate length is increased to greater than 100 nm, then manufacturing process becomes easier, but nanowire/nanosheet collapse and adhesion occur more frequently
Solution Approach 1:
The support portion penetrates through the nanowire/nanosheet structure to provide internal reinforcement. This intermediary support prevents structural collapse and maintains the spatial separation between nanowires/nanosheets, enabling stable device composition even when gate length is increased for easier manufacturing.
3Quantity of substance
If nanowire/nanosheet spacing is reduced to increase device density, then integration capacity is improved, but adhesion between nanowires/nanosheets increases
Solution Approach 1:
The support portion serves as a spacer that maintains minimum spacing between adjacent nanowires/nanosheets. By introducing this intermediary structure, high device density can be achieved while the support portions prevent adhesion by keeping the nanowires/nanosheets separated during manufacturing and operation.
Data Source
AI summary
Provided are a nanowire/nanosheet device with a support portion, a method of manufacturing the nanowire/nanosheet device, and an electronic apparatus including the nanowire/nanosheet device. According to the embodiments, the nanowire/nanosheet device may include: a substrate; a first source/drain layer and a second source/drain layer opposite to each other in a first direction on the substrate; a first nanowire/nanosheet spaced apart from a surface of the substrate and extending from the first source/drain layer to the second source/drain layer; one or more support portions penetrating the first nanowire/nanosheet in a direction perpendicular to the surface of the substrate; and a gate stack extending in a second direction to surround the first nanowire/nanosheet, wherein the second direction intersects the first direction.